PHOTOLUMINESCENCE OF n-ZnSe SINGLE CRYSTALS DOPED WITH IODINE BY VAPOUR PHASE DIFFUSION
Date
2006
Journal Title
Journal ISSN
Volume Title
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Abstract
Photoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated
in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by overlapping of the PL lines attributed to ISe donor-bound ecxitons (I2I) and VZn acceptorbound excitons (D1I). A model of radiation mechanisms, which explain the redistribution of the edge and long-wave PL bands intensities with increasing doping level of the samples, is proposed.
Description
Keywords
photoluminescence spectra
Citation
AVDONIN, A.N., IVANOVA, G.N. et al. Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion. In: Moldavian Journal of the Physical Sciences. 2006, nr. 1, pp. 23-26. ISSN 1810-648X.