Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion [Articol]

Simple item page
dc.contributor.authorAvdonin, A.N.
dc.contributor.authorNedeoglo, Dmitrii
dc.contributor.authorNedeoglo, Natalia
dc.contributor.authorSirkeli, Vadim
dc.contributor.authorIvanova, G.N.
dc.date.accessioned2018-04-21T12:03:30Z
dc.date.available2018-04-21T12:03:30Z
dc.date.issued2006
dc.description.abstractPhotoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by overlapping of the PL lines attributed to ISe donor-bound ecxitons (I2I) and VZn acceptorbound excitons (D1I). A model of radiation mechanisms, which explain the redistribution of the edge and long-wave PL bands intensities with increasing doping level of the samples, is proposed.en
dc.identifier.citationAVDONIN, A.N., IVANOVA, G.N. et al. Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion. In: Moldavian Journal of the Physical Sciences. 2006, nr. 1, pp. 23-26. ISSN 1810-648X.en
dc.identifier.issn1810-648X
dc.identifier.urihttps://msuir.usm.md/handle/123456789/1741
dc.language.isoenen
dc.subjectphotoluminescence spectraen
dc.titlePhotoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion [Articol]en
dc.typeArticleen

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
Photoluminescence of n_ZnSe single crystals doped with iodine by vapour phase diffusion.pdf
Size:
65.74 KB
Format:
Adobe Portable Document Format
Description:
Download

License bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

2. Articole