THE ELECTRICAL TRANSPORT MECHANISM IN THE (nCdS–рAs 2Se3 ) HETEROJUNCTIONS

Abstract

In the given paper we present results of I-V characterization of thin film heterojunctions on the basis of (nCdS)–(рAs 2 Se3 ). Structures have been obtained via spray pyrolysis deposition of polycrystalline nCdS layers on glass substrate and consecutive thermal vacuum deposition of the amorphous рAs 2 Se3 layers. The possible mechanisms of the current passing through obtained structure are discussed on the basis of results of I-V measurements performed at the different polarities and electrical field intensities in the heterojunction.