THE ELECTRICAL TRANSPORT MECHANISM IN THE (nCdS–рAs 2Se3 ) HETEROJUNCTIONS
| dc.contributor.author | Goglidze, Tatiana | |
| dc.contributor.author | Dementiev, Igor | |
| dc.contributor.author | Dmitriev, Serghei | |
| dc.contributor.author | Nasedchina, Nadejda | |
| dc.contributor.author | Mațcova, Natalia | |
| dc.date.accessioned | 2024-10-02T10:21:27Z | |
| dc.date.available | 2024-10-02T10:21:27Z | |
| dc.date.issued | 2008 | |
| dc.description.abstract | In the given paper we present results of I-V characterization of thin film heterojunctions on the basis of (nCdS)–(рAs 2 Se3 ). Structures have been obtained via spray pyrolysis deposition of polycrystalline nCdS layers on glass substrate and consecutive thermal vacuum deposition of the amorphous рAs 2 Se3 layers. The possible mechanisms of the current passing through obtained structure are discussed on the basis of results of I-V measurements performed at the different polarities and electrical field intensities in the heterojunction. | en |
| dc.identifier.citation | GOGLIDZE, Tatiana; Igor DEMENTIEV; Serghei DMITRIEV; Nadejda NASEDCHINA și Natalia MAȚCOVA. The electrical transport mechanism in the (nCdS–рAs2Se3) heterojunctions . Moldavian Journal of the Physical Sciences. 2008, nr. 4(7), pp. 471-475. ISSN 1810-648X. | en |
| dc.identifier.issn | 1810-648X | |
| dc.identifier.uri | https://msuir.usm.md/handle/123456789/16222 | |
| dc.language.iso | en | en |
| dc.title | THE ELECTRICAL TRANSPORT MECHANISM IN THE (nCdS–рAs 2Se3 ) HETEROJUNCTIONS | en |
| dc.type | Article | en |