Facultatea de Fizică şi Inginerie / Faculty of Physics and Engineering
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Item Luminescent properties of ZnS single crystal annealed in the V th group elements melt [Articol](2006) Sobolevscaia, Raisa; Corotcov, Vadim; Bruc, Leonid; Sușchevici, Constantin; Chetruș, PetruThe influence of ZnS single crystal annealing in the media based on V-group elements Bi and Sb on its photoluminescent (PL) properties was studied. The following media: Bi, Sb, Bi+Zn, Sb+Zn, Bi+S, Sb+As and Bi+Al were used for the annealing.Two types of the starting crystals were used: I) low resistivity ZnS; II) high resistivity ZnS. The annealing was carried out in the vacuumed silica ampoules at the temperatures of 1400 K (I) and 1200 K (II) during 100hrs. The obtained results show that ZnS crystals annealing in Bi and Sb melts leads to the analogical reorganization of radiation centers based on the native and impurity defects generated by interphase interaction at ZnS-melt interface. These defects are responsible for the appearance of the green radiation having the feature of intracentred transitions. The high value of green band half-width indicates that it is a superposition of a few bands. These could be a PL bands related to the oxygen presence, the impurity centers of the V group elements and to V S .Item (Benzoyl-formaldehyde oximato-κ2 N,O)(benzoyl-formaldehyde oxime-κN) chloridoplatinum(II) [Articol](2007) Cucușchin, Nicolae; Chetruș, Petru; Haukka, MattiIn the title complex, [Pt(C 8H 6NO 2 )Cl(C 8H 7NO 2)], the Pt II centre is coordinated by a monodentate and an N,O-chelating deprotonated benzoylformaldehyde oxime and a Cl atom. There is an intramolecular N—OH—O hydrogen-bonding system between the oxime OH group and the oximate O atom.Item Electrical and photoelectrical properties of heterojunctions on the base of Cu(InGa)Se2 [Articol](2005) Chetruș, Petru; Gașin, Petru; Nicorici, Valentina; Suman, VictorCdS films deposited by hot wall technique on mica were used as substrates for Cu(InGa)Se2 deposition. Two methods were used for the deposition of Cu(InGa)Se2 films: a) vacuum thermal evaporation from a single source and b) “flash” evaporation. The obtained films were of p-type conductivity with hole concentration varied from 2×1018 cm-3 to 6×1020 cm-3 depending on the fabrication method. The structures Cu(InGa)Se2–CdS were divided into two groups: the structures of type I having the CdS film thickness from 1.6 m to 2.8 m and the structures of type II having the CdS film thickness from 0.6 m to 0.8 m. It was established that the direct/reverse current ratio is 8-16. For the first type heterostructures the diffusion potential is 1.2–1.8 V and for the second type is 0.2–0.34 V. The Cu(InGa)Se2–CdS fotosensitivity is situated in the wavelength region from 0.51 m to 1.1 m and is determined by the electron-hole pair generation in both materials.Item About the edge luminescence of cadmium sulphide thin layers grown on molybdenum [Articol](Institute of Electrical and Electronics Engineers, 1995-11-11) Raevschi, Simion; Gorceac, Leonid; Coval, Andrei; Chetruș, PetruCdS layers on to molybdenum were synthesized from separate elements in an open flowing hydrogen set. The surface micromorphology and some electrical and photoluminescent properties were investigated. The nature of layers edge photoluminescence peaks are discussed in the frames of the excitated exciton model.