2. Articole

Permanent URI for this collectionhttps://msuir.usm.md/handle/123456789/47

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Subject: search.filters.subject.CdS CdTe

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    NB-DOPED TIO2 THIN FILMS FOR PHOTOVOLTAIC APPLICATIONS
    (Elsevier, 2015) Potlog, Tamara; Dumitriu, P.; Dobromir, M.; Manole, A.; Luca, D.
    Polycrystalline titania and Nb:TiO2 thin films were deposited by RF magnetron sputtering. The influence of post-deposition annealing in vacuum and hydrogen atmosphere on the structure, morphology, oxidation states and optical properties was studied by X-ray diffraction, atomic force microscopy, XPS and UV–VIS spectroscopy. The heat treatment of titanium dioxide thin films in vacuum and H2 atmosphere induces structural and morphological changes. The band gap narrowing was observed for the transparent as-deposited Nb:TiO2 films, while annealing at 420 °C in H2 atmosphere resulted in an enhancement of the electrical conductivity. Further on, TiO2/p-CdTe photovoltaic devices with efficiency of 1.8% were fabricated and their characteristic ‘enhancement’ is discussed.
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    THE COPPER INFLUENCE ON THE PL SPECTRA OF CDTE THIN FILM AS A COMPONENT OF THE CDS/CDTE HETEROJUNCTION
    (Elsevier, 2009) Vatavu, Sergiu; Zhao, Hehong; Caraman, Iuliana; Gașin, Petru; Ferekides, Chris
    The influence of annealing in the presence of CdCl2 and a thin copper layer deposited onto CdTe on the photoluminescence spectra of CdTe, as a component of CdS/CdTe heterojunction, has been studied for two excitation wavelengths: 0.337 μm and 0.6328 μm. The behavior of the PL was studied as a function of the measurement temperature and excitation intensity. At 0.6328 μm excitation, the interface PL consists of a known 1.43X band, and the chloride annealing enhances radiative transitions at 1.536 eV. The intensity of the 1.536 eV transitions increases when Cu is present. The PL of as-deposited CdTe films prepared in the presence of oxygen has the 1.45X band attenuated when excited with 0.337 μm excitation wavelength.
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    PHOTOLUMINESENCE STUDIES OF CDTE/SNO2 AND CDTE/CDS HETEROJUNCTIONS: THE INFLUENCE OF OXYGEN AND THE CDCL2 HEAT TREATMENT
    (Elsevier, 2011) Vatavu, Sergiu; Zhao, Hehong; Caraman, Iuliana; Gasin, Petru; Ferekides, Chris
    The influence of oxygen and annealing in the presence of CdCl2 on the photoluminescence (PL) spectra of CdTe, component of SnO2/CdTe heterojunction (HJ), has been studied in a temperature range of 17–100 K. The changes in the photoluminescence spectra were studied as a function of excitation intensity. Analysis of the PL spectra was carried out with considerations of spectra obtained from CdS/CdTe heterojunctions. CdTe side PL (SnO2/CdTe HJ) consisted of 1.450 eV-DA defect band and 1.243 eV band (17 K). Annealing resulted in the disappearance of 1.243 eV band in oxygen containing samples. Interface PL for the unannealed samples consisted of mainly the 1.264 eV and a trace of the defect band. The CdCl2 treatment is responsible for an almost symmetrical 1.416 eV band.