THE COPPER INFLUENCE ON THE PL SPECTRA OF CDTE THIN FILM AS A COMPONENT OF THE CDS/CDTE HETEROJUNCTION
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Date
2009
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
The influence of annealing in the presence of CdCl2 and a thin copper layer deposited onto CdTe on the photoluminescence spectra of CdTe, as a component of CdS/CdTe heterojunction, has been studied for two excitation wavelengths: 0.337 μm and 0.6328 μm. The behavior of the PL was studied as a function of the measurement temperature and excitation intensity. At 0.6328 μm excitation, the interface PL consists of a known 1.43X band, and the chloride annealing enhances radiative transitions at 1.536 eV. The intensity of the 1.536 eV transitions increases when Cu is present. The PL of as-deposited CdTe films prepared in the presence of oxygen has the 1.45X band attenuated when excited with 0.337 μm excitation wavelength.
Description
Keywords
CdS CdTe, Cu, heterojunctions, Photoluminescence (PL)
Citation
VATAVU, Sergiu, ZHAO, Hehong, CARAMAN, Iuliana et al. The copper influence on the PL spectra of CdTe thin film as a component of the CdS/CdTe heterojunction. n: Thin Solid Films. 2009, Vol. 517, Issue 7, pp. 2195 -2201. ISSN 0040 - 6090.