2. Articole

Permanent URI for this collectionhttps://msuir.usm.md/handle/123456789/47

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1995 - 19995

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Start date: 1995End date: 1999

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Now showing 1 - 5 of 5
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    EPITAXIAL RELATIONS IN BaF2 FILMS GROWN BY MBE ON Si(III) SUBSTRATES
    (Institute of Electrical and Electronics Engineers Inc., 1995-10-11) Belenciuc, Alexandr; Fiodorov, Alexandr; Zencenco, Vladimir; Lucaș, Victor; Vasiliev, Alexandr
    The dependence of the epitaxial orientations of the films in BaFdSi(III) heterostructures on growth conditions and the influence of heat treatment on the stability of epitaxial relations in such structures are investigated. The correlations between the types of epitaxial relations and structures of interface are also discussed.
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    NON-LINEAR TRANSPORT PROPERTIES OF PbTe SEMICONDUCTORS
    (Institute of Electrical and Electronics Engineers Inc., 1997-10-07) Nicorici, Andrei; Canțer, Valeriu; Nicorici, Valentina; Constantinescu, Dana
    The results of the I-V characteristics (IVC) investigation on PbTe〈Ga〉 semiconductor samples in the temperature range 67-100 K are given. IVC was found to be N-shaped, and at temperatures below 77 K the electric current oscillations through the sample were observed.
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    NUCLEAR QUADRUPOLE RESONANCE OF MIXED-VALENCE CHARGE-ORDERED DIMERS
    (1999) Clochișner, Sofia; Gorceac, Leonid
    The influence of an external magnetic field on the conditions of charge ordering of mixed-valence dimer clusters Ni 2q–Niq is considered. The manifestations of charge ordering in the spectra of nuclear quadrupole resonance are elucidated. These spectra are shown to give information on the key parameters of charge-ordered crystals.
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    ABOUT THE EDGE LUMINESCENCE OF CADMIUM SULPHIDE THIN LAYERS GROWN ON MOLYBDENUM
    (Institute of Electrical and Electronics Engineers, 1995-11-11) Raevschi, Simion; Gorceac, Leonid; Coval, Andrei; Chetruș, Petru
    CdS layers on to molybdenum were synthesized from separate elements in an open flowing hydrogen set. The surface micromorphology and some electrical and photoluminescent properties were investigated. The nature of layers edge photoluminescence peaks are discussed in the frames of the excitated exciton model.
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    THE STRUCTURE OF HIGH-TEMPERATURE BLUE LUMINESCENCE CENTERS IN ZINC SELENIDE AND MECHANISMS OF THIS LUMINESCENCE
    (Springer Nature, 1998) Ivanova, G.N.; Kasiyan, V.A.; Nedeoglo, Dmitrii; Nedeoglo, Natalia; Simashkevich, A.V.
    The characteristic features of temperature quenching of the intensity of the edge luminescence bands of n-ZnSe crystals annealed in different media (vacuum, Zn, Se) are investigated a wide temperature range. A change in the mechanisms of high-temperature exciton luminescence in the short-wavelength region of the spectrum (443 nm) with increase in temperature of the crystal is observed. It is shown that the nature of temperature quenching of the long-wavelength edge luminescence band (458 nm) is evidence of dissociation of associative luminescence centers with increase in the sample temperature.