Epitaxial relations in BaF2 films grown by MBE on Si(III) substrates [Articol]
Date
1995-10-11
Journal Title
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Publisher
Institute of Electrical and Electronics Engineers Inc.
Abstract
The dependence of the epitaxial orientations of the films in BaFdSi(III)
heterostructures on growth conditions and the influence of heat treatment on the stability of epitaxial relations in such structures are investigated. The correlations between the types of epitaxial relations and structures of interface are also discussed.
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Citation
BELENCIUC, Alexandr; Alexandr FIODOROV; Vladimir ZENCENCO; Victor LUKAȘ și Alexandr VASILIEV. Epitaxial relations in BaF2 films grown by MBE on Si(III) substrates. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 18, Octomber 11-14 th 1995, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1995, pp. 117-120.