Epitaxial relations in BaF2 films grown by MBE on Si(III) substrates [Articol]

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dc.contributor.authorBelenciuc, Alexandr
dc.contributor.authorFiodorov, Alexandr
dc.contributor.authorZencenco, Vladimir
dc.contributor.authorLucaș, Victor
dc.contributor.authorVasiliev, Alexandr
dc.date.accessioned2024-10-08T09:55:02Z
dc.date.available2024-10-08T09:55:02Z
dc.date.issued1995-10-11
dc.description.abstractThe dependence of the epitaxial orientations of the films in BaFdSi(III) heterostructures on growth conditions and the influence of heat treatment on the stability of epitaxial relations in such structures are investigated. The correlations between the types of epitaxial relations and structures of interface are also discussed. en
dc.identifier.citationBELENCIUC, Alexandr; Alexandr FIODOROV; Vladimir ZENCENCO; Victor LUKAȘ și Alexandr VASILIEV. Epitaxial relations in BaF2 films grown by MBE on Si(III) substrates. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 18, Octomber 11-14 th 1995, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1995, pp. 117-120.en
dc.identifier.isbn0-7803-2647-4
dc.identifier.urihttps://msuir.usm.md/handle/123456789/16272
dc.identifier.urihttps://doi.org/10.1109/SMICND.1995.494877
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en
dc.titleEpitaxial relations in BaF2 films grown by MBE on Si(III) substrates [Articol]en
dc.typeArticleen

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