2. Articole

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1995 - 199922000 - 20096

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Author: search.filters.author.Gorceac, LeonidEnd date: 2009

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Now showing 1 - 8 of 8
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    NUCLEAR QUADRUPOLE RESONANCE OF MIXED-VALENCE CHARGE-ORDERED DIMERS
    (1999) Clochișner, Sofia; Gorceac, Leonid
    The influence of an external magnetic field on the conditions of charge ordering of mixed-valence dimer clusters Ni 2q–Niq is considered. The manifestations of charge ordering in the spectra of nuclear quadrupole resonance are elucidated. These spectra are shown to give information on the key parameters of charge-ordered crystals.
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    ABOUT THE EDGE LUMINESCENCE OF CADMIUM SULPHIDE THIN LAYERS GROWN ON MOLYBDENUM
    (Institute of Electrical and Electronics Engineers, 1995-11-11) Raevschi, Simion; Gorceac, Leonid; Coval, Andrei; Chetruș, Petru
    CdS layers on to molybdenum were synthesized from separate elements in an open flowing hydrogen set. The surface micromorphology and some electrical and photoluminescent properties were investigated. The nature of layers edge photoluminescence peaks are discussed in the frames of the excitated exciton model.
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    THIN AlN FILMS GROWTH ON Si (III) BY HYDRIDE VAPOR PHASE EPITAXY
    (2008) Raevschi, Simion; Davydov, Valerii; Zhilaev, Yurii; Gorceac, Leonid; Botnariuc, Vasile
    Thin AlN layers have been grown on Si (111) by hydride vapor phase epitaxy (HVPE) method in a horizontal quartz reactor. The surface of layers has been studied by scanning electron microscopy and by the Raman spectroscopy method and found to have the structured morphology. It has been determined that the layers have high specific electrical resistance and are strained in the plane of the substrate.
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    CERCETAREA CELULELOR SOLARE CU HETEROJONCŢIUNEA nCdS-pInP
    (CEP USM, 2009) Gorceac, Leonid; Botnariuc, Vasile; Raevschi, Simion; Coval, Andrei; Chitoroagă, Andrei
    Photoelectrical dependencies of nCdS-pInP solar cells, as a function of electro physical parameters, crystallographic orientation of InP substrate and of the deposition duration of the nCdS epitaxial for layer are presented. It was established that the maximum value of the efficiency of solar energy into electrical one is obtained for the holes concentration in the substrate of 2·1016 cm-3, crystallographic orientation (100) and layer growth duration of 25 min. The hetero structure parameters influencing the named dependencies are determined.
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    OBŢINEREA STRATURILOR AlN PE Si PRIN METODA HVPE ŞI CERCETAREA PROPRIETĂŢILORLOR
    (CEP USM, 2008) Raevschi, Simion; Davydov, Valerii; Zhilyaev, Yurii; Gorceac, Leonid; Botnariuc, Vasile
    AlN layers on Si(111) were fabricated by Hydride Vapor Phase Eptaxy (HVPE). The obtained layers were studied by using Raman spectroscopy and by scanning electron microscope (SEM). The layers surface is structured. The Raman spectra of the layers, obtained at the temperatures of 800-1100oC, are presented. It was established that the layers are mechanically deformed in substrate plane and have a high value of the threshold voltage (are dielectrics).
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    PARAMETRII CELULELOR SOLARE nITO/pInP OBŢINUTE PRIN METODA PULVERIZĂRII PIROLITICE ÎN DEPENDENŢĂ DE TRATAREA LOR TERMICĂ ÎN HIDROGEN
    (CEP USM, 2007) Simaşchevici, Alexei; Şerban, Dormidont; Gorceac, Leonid; Bruk, Leonid; Coval, Andrei; Usatîi, Iurie; Fedorov, Vladimir
    The main objective of this communication is the investigation of the influence of thermal treatment in H2on the parameters of In/nITO/P2O5/pInP/Ag:Zn solar cells obtained by ITO layers pyrolithic pulverization. The ITO/pInP heterostructures obtaining take place at the temperature of 450ºC. The photoelectric parameters of the solar cell received on InP wafers with concentration p = 3·1017cm-3after the thermal treatment are Voc=0.626 V, Isc = 22.72 mA/cm2, FF = 71%, Eff =10.09%. As a result of these investigations it was shown that the thermal treatment of In/nITO/pInP/Ag:ZnSC in H2at 350oC during 10 min. leads to considerable improvement of their photoelectric parameters.
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    STRATURI EPITAXIALE OMOGENE DE CdS OB ŢINUTE PE InP ÎN HIDROGEN
    (CEP, 2007) Raevschi, Simion; Gorceac, Leonid; Gaugaş, Petru; Botnariuc, Vasile
    Epitaxial layers of the CdS on InP in the open flowing hydrogen system are obtained. Efficiency of zone method growth from a gas phase is shown at deposition of the homogeneous layers of large area.
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    STUDIUL PROPRIETĂŢILOR ELECTRICE ŞI FOTOVOLTAICE ALE STRUCTURILOR ITO-Si ÎN BAZA SILICIULUI MULTICRISTALIN
    (CEP USM, 2009) Simaşchevici, Alexei; Şerban, Dormidont; Bruc, Leonid; Gorceac, Leonid; Coval, Andrei; Fedorov, Vladimir; Usatîi, Iurie
    ITO-polycrystalline p-type silicon structures with surface barriers are obtained by pyrolytical spraying of indium andtin chloride solutions and their electrical and photoelectrical properties are studied. The spectral sensibility range, current transport mechanisms and the parameters of the heterostructure under forward and reverse bias are determined. It isshown the possibility of using these heterojunctions in solar radiation conversion.