STUDIUL PROPRIETĂŢILOR ELECTRICE ŞI FOTOVOLTAICE ALE STRUCTURILOR ITO-Si ÎN BAZA SILICIULUI MULTICRISTALIN

Abstract

ITO-polycrystalline p-type silicon structures with surface barriers are obtained by pyrolytical spraying of indium andtin chloride solutions and their electrical and photoelectrical properties are studied. The spectral sensibility range, current transport mechanisms and the parameters of the heterostructure under forward and reverse bias are determined. It isshown the possibility of using these heterojunctions in solar radiation conversion.