2. Articole

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Author: search.filters.author.Fiodorov, Alexandr

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    EPITAXIAL RELATIONS IN BaF2 FILMS GROWN BY MBE ON Si(III) SUBSTRATES
    (Institute of Electrical and Electronics Engineers Inc., 1995-10-11) Belenciuc, Alexandr; Fiodorov, Alexandr; Zencenco, Vladimir; Lucaș, Victor; Vasiliev, Alexandr
    The dependence of the epitaxial orientations of the films in BaFdSi(III) heterostructures on growth conditions and the influence of heat treatment on the stability of epitaxial relations in such structures are investigated. The correlations between the types of epitaxial relations and structures of interface are also discussed.
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    X-RAY DIFFRACTION ANALYSIS OF PbTe/SnTe SUPERLATTICES GROWN ON Si(III) SUBSTRATES
    (2009) Șapoval, Oleg; Belenciuc, Alexandr; Fiodorov, Alexandr; Canțer, Valeriu; Zasavițchi, Efim
    The 50 period PbTe/SnTe superlattices (SLs) were grown on Si (111) substrates by hot-wall beam epitaxy (HWBE) using an intermediate fluoride buffer. The SL period varied from 6.6 to 24.0 nm with PbTe:SnTe thickness ratios of 2:1 and 1:1. The structural analysis was performed by X-ray diffraction and reflection measurement techniques. The resolution up to 8 orders of SL satellite diffraction peaks indicates well-formed SLs with sharp interfaces and long range ordering. The processing of X-ray spectra on the basis of dynamical theory of diffraction was used for estimation of individual layer thicknesses and residual strains. The differences in lattice parameters both between SL components and relative to the substrate, as well as the thermal expansion coefficient mismatch of A 4 B 6 compounds with regard to the substrate, are the reasons for the strains appearing in this SL structure. Fitted parameters of the normal lattice mismatch revealed that the SnTe layers are equally strained independent of thickness, whereas the stress of PbTe layers is progressively decreasing with thickness. In spite of residual lattice mismatch strain, the SL structures exhibited ability to full relax of the thermal mismatch strains as in the case of earlier investigated single layers of A 4 B6 grown on Si (111) coated with fluoride buffer. Our results indicate the possibility to fabricate high efficient thermoelectric coolers based on PbTe/SnTe SLs directly integrated with Si chips.