Browsing by Author "Vatavu, Elmira"

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    FOTOREZISTOR PENTRU REGIUNEA ULTRAVIOLETĂ PE BAZĂ DE STRAT DIN NANOFIRE DE β-Ga2O
    (CEP USM, 2022-11-10) Vatavu, Elmira; Sprincean, Veaceslav; Dmitroglo, Liliana; Gurău, Virginia; Caraman, Mihail
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    PROPRIETĂŢILE ELECTRICE ŞI FOTOELECTRICE ALE MONOSELENIURII DE GALIU DOPAT CU Cd
    (CEP USM, 2011) Dmitroglo, Liliana; Vatavu, Elmira; Evtodiev, Igor; Caraman, Mihail
    The paper is focused on analysis of structural transformations and investigations on electrical and photoelectrical properties of GaSe and GaSe: Cd semiconductors. The XRD analysis demonstrated that Cd atoms are homogeneously distributed in GaSe. It has been also shown that Cd atoms form localized levels which increase the absorption for hν
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    STRATURI SUBȚIRI Ga2S3 PENTRU APLICAȚII ÎN DETECTORI DE RADIAȚII ELECTROMAGNETICE
    (CEP USM, 2022-11-10) Spoială, Dorin; Ghilețchii, Gheorghe; Vatavu, Elmira; Dmitroglo, Liliana; Şapoval, Oleg; Belenciuc, Alexandr; Rotaru, Corneliu; Narolschi, Igor; Vatavu, Sergiu
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    STRUCTURA CRISTALINĂ ŞI PROPRIETĂŢILE OPTICE ALE MATERIALELOR COMPOZITE OBŢINUTE PRIN INTERCALARE CU Cd A MONOCRISTALELOR DE GaSe ŞI GaTe
    (CEP USM, 2019) Vatavu, Elmira; Dmitroglo, Liliana; Untilă, Dumitru; Sprincean, Veaceslav; Caraman, Mihail
    Formarea prin tratament termic a monocristalelor de GaSe şi GaTe în vapori de Cd a materialului compus din cristalite de GaSe şi CdSe şi, respectiv, de GaTe şi CdTe cu dimensiuni nanometrice a fost confirmată prin analiza diagramelor XRD, imaginilor SEM şi a difuziei combinate Raman. Nanocompozitele GaSe-CdSe şi GaTe-CdTe sunt materiale fotoluminescente (FL) în regiunea oranj-roşu a spectrului. Benzile de FL a compozitelor sunt formate prin suprapunerea benzilor de FL impuritară a cristalitelor componente ale nanocompozitelor GaSe-CdSe şi GaTe-CdTe.
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    STRUCTURA ŞI FOTOLUMINESCENŢA COMPOZITELOR OBŢINUTE PRIN TRATAMENT TERMIC ÎN VAPORI DE CD A MONOCRISTALELOR DE GA2S3
    (CEP USM, 2014) Vatavu, Elmira; Caraman, Iuliana; Evtodiev, Igor; Caraman, Mihail; Luchian, Efimia; Untila, Dumitru
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    STRUCTURA ȘI MORFOLOGIA STRATURILOR NANOMETRICE DE ZnSnN2 PREPARATE PRIN MAGNETRON SPUTTERING
    (CEP USM, 2022-11-10) Narolschi, Igor; Ghilețchii, Gheorghe; Cliucanov, Alexandr; Rotaru, Corneliu; Spoială, Dorin; Vatavu, Elmira; Şapoval, Oleg; Belenciuc, Alexandr; Dmitroglo, Liliana; Bercu, Elena; Rusu, Marin; Vatavu, Sergiu
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    THE STRUCTURE AND CHEMICAL COMPOSITION OF Ga2O3 OXIDE PREPARED BY ANNEALING OF Ga2Se3 CRYSTALS
    (Springer Nature, 2020) Sprincean, Veaceslav; Vatavu, Elmira; Dmitroglo, Liliana; Untila, Dumitru; Caraman, Iuliana; Caraman, Mihail
    The chemical composition and structure of Ga2O3 obtained by thermal treatment (TT) in air of β-Ga2Se3 crystals were studied using the X-ray diffraction (XRD) method, Raman spectroscopy, EDX, and SEM. The surface of the Ga2Se3 crystal air annealed at 770 K is covered by β-Ga2O3 layer of microcrystallites and as well as by β-Ga2Se3 crystallites. The oxygen is non-homogeniously distributed on the surface of the 770 K annealed sample. The sample obtained by TT at 1150 K consists of nanolamella, nanotowers, and nanobars of β-Ga2O3, their size being estimated to 10–200 nm.
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    SYNTHESIS AND OPTICAL PROPERTIES OF Ga2O3 NANOWIRES GROWN ON GaS SUBSTRATE
    (Elsevier, 2019) Leontie, L.; Sprincean, Veaceslav; Spaltu, N.; Cojocaru, A.; Susu, Ana; Lupan, Oleg; Vatavu, Elmira; Carlescu, Aurelian; Untila, Dumitru; Caraman, Iuliana; Evtodiev, Igor; Tiginyanu, Ion; Caraman, Mihail
    Gallium oxide (β-Ga2O3) nanowires were synthesized by heat treatment of single crystal β-GaS plates in air. Crystal structure and composition of synthesized materials were studied by X-ray diffraction, energy dispersive X-ray spectroscopy and Raman spectroscopy. Thermal treatment of β-GaS plates at 1023 K leads to the formation of a Ga2O3 (native oxide) layer on β-GaS (0001) surface of plates. Layer thickness and size of Ga2O3 wires contained were found to depend on temperature and duration of applied heat treatment. For 1023 K and 6 h, the length of Ga2O3 wires laid in the range from units to tens of nanometers, while for 1123 K and 30 min, between 30 and 40 μm.