PROPRIETĂŢILE ELECTRICE ŞI FOTOELECTRICE ALE MONOSELENIURII DE GALIU DOPAT CU Cd

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2011

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CEP USM

Abstract

The paper is focused on analysis of structural transformations and investigations on electrical and photoelectrical properties of GaSe and GaSe: Cd semiconductors. The XRD analysis demonstrated that Cd atoms are homogeneously distributed in GaSe. It has been also shown that Cd atoms form localized levels which increase the absorption for hν<Eg as well as increase holes' concentration up to 1.42·1017 cm-3.

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Keywords

monoseleniura de galiu, metoda Bridgman-Stockbarger, atomi de Cd

Citation

DMITROGLO, Liliana; VATAVU, Elmira, et. al. Proprietăţile electrice şi fotoelectrice ale monoseleniurii de galiu dopat cu Cd. In: Studia Universitatis Moldaviae. Seria Ştiinţe Exacte şi Economice: Matematică. Informatică. Fizică. Economie. Revistă științifică. 2011, nr. 7(47), pp. 117-121. ISSN 1857-2073.

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