PROPRIETĂŢILE ELECTRICE ŞI FOTOELECTRICE ALE MONOSELENIURII DE GALIU DOPAT CU Cd
Date
2011
Journal Title
Journal ISSN
Volume Title
Publisher
CEP USM
Abstract
The paper is focused on analysis of structural transformations and investigations on electrical and photoelectrical properties of GaSe and GaSe: Cd semiconductors. The XRD analysis demonstrated that Cd atoms are homogeneously distributed in GaSe. It has been also shown that Cd atoms form localized levels which increase the absorption for hν<Eg
as well as increase holes' concentration up to 1.42·1017 cm-3.
Description
Keywords
monoseleniura de galiu, metoda Bridgman-Stockbarger, atomi de Cd
Citation
DMITROGLO, Liliana; VATAVU, Elmira, et. al. Proprietăţile electrice şi fotoelectrice ale monoseleniurii de galiu dopat cu Cd. In: Studia Universitatis Moldaviae. Seria Ştiinţe Exacte şi Economice: Matematică. Informatică. Fizică. Economie. Revistă științifică. 2011, nr. 7(47), pp. 117-121. ISSN 1857-2073.