Proprietăţile electrice şi fotoelectrice ale monoseleniurii de galiu dopat cu Cd [Articol]
| dc.contributor.author | Dmitroglo, Liliana | |
| dc.contributor.author | Vatavu, Elmira | |
| dc.contributor.author | Evtodiev, Igor | |
| dc.contributor.author | Caraman, Mihail | |
| dc.date.accessioned | 2021-06-21T10:30:45Z | |
| dc.date.available | 2021-06-21T10:30:45Z | |
| dc.date.issued | 2011 | |
| dc.description.abstract | The paper is focused on analysis of structural transformations and investigations on electrical and photoelectrical properties of GaSe and GaSe: Cd semiconductors. The XRD analysis demonstrated that Cd atoms are homogeneously distributed in GaSe. It has been also shown that Cd atoms form localized levels which increase the absorption for hν<Eg as well as increase holes' concentration up to 1.42·1017 cm-3. | en |
| dc.identifier.citation | DMITROGLO, Liliana; VATAVU, Elmira, et. al. Proprietăţile electrice şi fotoelectrice ale monoseleniurii de galiu dopat cu Cd. In: Studia Universitatis Moldaviae. Seria Ştiinţe Exacte şi Economice: Matematică. Informatică. Fizică. Economie. Revistă științifică. 2011, nr. 7(47), pp. 117-121. ISSN 1857-2073. | en |
| dc.identifier.issn | 1814-3237 | |
| dc.identifier.uri | https://msuir.usm.md/handle/123456789/4483 | |
| dc.language.iso | ro | en |
| dc.publisher | CEP USM | en |
| dc.subject | monoseleniura de galiu | en |
| dc.subject | metoda Bridgman-Stockbarger | en |
| dc.subject | atomi de Cd | en |
| dc.title | Proprietăţile electrice şi fotoelectrice ale monoseleniurii de galiu dopat cu Cd [Articol] | en |
| dc.type | Article | en |