SYNTHESIS AND OPTICAL PROPERTIES OF Ga2O3 NANOWIRES GROWN ON GaS SUBSTRATE
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Date
2019
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Gallium oxide (β-Ga2O3) nanowires were synthesized by heat treatment of single crystal β-GaS plates in air. Crystal structure and composition of synthesized materials were studied by X-ray diffraction, energy dispersive X-ray spectroscopy and Raman spectroscopy. Thermal treatment of β-GaS plates at 1023 K leads to the formation of a Ga2O3 (native oxide) layer on β-GaS (0001) surface of plates. Layer thickness and size of Ga2O3 wires contained were found to depend on temperature and duration of applied heat treatment. For 1023 K and 6 h, the length of Ga2O3 wires laid in the range from units to tens of nanometers, while for 1123 K and 30 min, between 30 and 40 μm.
Description
Keywords
gallium(III) trioxide, gallium(III) sulfide, oxidation, structural properties, photoluminescence, optical properties
Citation
LEONTIE, L., SPRINCEAN, V. et al. Synthesis and optical properties of Ga2O3 nanowires grown on GaS substrate. In: Thin Solid Films. 2019, Vol.689, 137502. ISSN 0040-6090.