SYNTHESIS AND OPTICAL PROPERTIES OF Ga2O3 NANOWIRES GROWN ON GaS SUBSTRATE

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dc.contributor.authorLeontie, L.
dc.contributor.authorSprincean, Veaceslav
dc.contributor.authorSpaltu, N.
dc.contributor.authorCojocaru, A.
dc.contributor.authorSusu, Ana
dc.contributor.authorLupan, Oleg
dc.contributor.authorVatavu, Elmira
dc.contributor.authorCarlescu, Aurelian
dc.contributor.authorUntila, Dumitru
dc.contributor.authorCaraman, Iuliana
dc.contributor.authorEvtodiev, Igor
dc.contributor.authorTiginyanu, Ion
dc.contributor.authorCaraman, Mihail
dc.date.accessioned2021-12-06T14:29:11Z
dc.date.available2021-12-06T14:29:11Z
dc.date.issued2019
dc.description.abstractGallium oxide (β-Ga2O3) nanowires were synthesized by heat treatment of single crystal β-GaS plates in air. Crystal structure and composition of synthesized materials were studied by X-ray diffraction, energy dispersive X-ray spectroscopy and Raman spectroscopy. Thermal treatment of β-GaS plates at 1023 K leads to the formation of a Ga2O3 (native oxide) layer on β-GaS (0001) surface of plates. Layer thickness and size of Ga2O3 wires contained were found to depend on temperature and duration of applied heat treatment. For 1023 K and 6 h, the length of Ga2O3 wires laid in the range from units to tens of nanometers, while for 1123 K and 30 min, between 30 and 40 μm.en
dc.identifier.citationLEONTIE, L., SPRINCEAN, V. et al. Synthesis and optical properties of Ga2O3 nanowires grown on GaS substrate. In: Thin Solid Films. 2019, Vol.689, 137502. ISSN 0040-6090.en
dc.identifier.issn0040-6090
dc.identifier.urihttps://www.sciencedirect.com/science/article/abs/pii/S0040609019305309?via%3Dihub
dc.identifier.urihttps://msuir.usm.md/handle/123456789/5097
dc.language.isoenen
dc.publisherElsevieren
dc.subjectgallium(III) trioxideen
dc.subjectgallium(III) sulfideen
dc.subjectoxidationen
dc.subjectstructural propertiesen
dc.subjectphotoluminescenceen
dc.subjectoptical propertiesen
dc.titleSYNTHESIS AND OPTICAL PROPERTIES OF Ga2O3 NANOWIRES GROWN ON GaS SUBSTRATEen
dc.typeArticleen

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