Tranziţii excitonice indirecte în cristalele de GaSe:Cd [Articol]
| dc.contributor.author | Dmitroglo, Liliana | |
| dc.date.accessioned | 2021-06-21T10:11:18Z | |
| dc.date.available | 2021-06-21T10:11:18Z | |
| dc.date.issued | 2011 | |
| dc.description.abstract | The investigation of indirect excitonic transitions in GaSe:Cd crystals, grown by Bridgman method is brought in this paper. The gallium selenide doping with cadmium atoms was carried out during the synthesis process. At GaSe doping with 0,5% at of Cd the majority charge carriers are holes with the concentration of 6,0·1015 cm-3. The GaSe undoped crystals indirect band ga pat the temperatures of 298 K and 77K equals to 1,920 eV and 2,008 eV accordingly. Cd forms in ε-GaSe compound band gap at acceptor leve lat 0,116 eV under he valence band top. | en |
| dc.identifier.citation | DMITROGLO, Liliana. Tranziţii excitonice indirecte în cristalele de GaSe:Cd. In: Studia Universitatis Moldaviae. Seria Ştiinţe Exacte şi Economice: Matematică. Informatică. Fizică. Economie. Revistă științifică. 2011, nr. 7(47), pp. 112-116. ISSN 1857-2073. | en |
| dc.identifier.issn | 1857-2073 | |
| dc.identifier.uri | http://studiamsu.eu/nr-7-47-2011/ | |
| dc.identifier.uri | https://msuir.usm.md/handle/123456789/4482 | |
| dc.language.iso | ro | en |
| dc.publisher | CEP USM | en |
| dc.subject | cristale de GaSe | en |
| dc.subject | tranziții excitonice | en |
| dc.title | Tranziţii excitonice indirecte în cristalele de GaSe:Cd [Articol] | en |
| dc.type | Article | en |