Tranziţii excitonice indirecte în cristalele de GaSe:Cd [Articol]

Abstract

The investigation of indirect excitonic transitions in GaSe:Cd crystals, grown by Bridgman method is brought in this paper. The gallium selenide doping with cadmium atoms was carried out during the synthesis process. At GaSe doping with 0,5% at of Cd the majority charge carriers are holes with the concentration of 6,0·1015 cm-3. The GaSe undoped crystals indirect band ga pat the temperatures of 298 K and 77K equals to 1,920 eV and 2,008 eV accordingly. Cd forms in ε-GaSe compound band gap at acceptor leve lat 0,116 eV under he valence band top.