On the photoconductivity of Bi2O3 in thin films [Articol]

dc.contributor.authorLeontie, Liviu
dc.contributor.authorCaraman, Mihail
dc.contributor.authorRusu, Gheorghe Ioan
dc.date.accessioned2024-09-25T08:29:34Z
dc.date.available2024-09-25T08:29:34Z
dc.date.issued2000
dc.descriptionLEONTIE, Liviu; Mihail CARAMAN și Gheorghe Ioan RUSU. On the photoconductivity of Bi2O3 in thin films. Journal of Optoelectronics and Advanced Materials. 2000, vol. 2, pp. 385-389. ISSN (Online) 1841 - 7132. .
dc.description.abstractThe spectral characteristics of photoconductivity for Bi2 O3 thin films were investigated. The films were prepared by thermal oxidation in air of Bi evaporated films. As revealed by X-ray diffraction and polarizing microscopy studies, polycrystalline and multiphasic films were obtained. From the photoconductivity spectral curves, the bandgap energy values were determined, by using the Moss criterion. The influence of oxidation (preparation) conditions on the Eg values is discussed. The photoconductivity of Al-Bi 2 O3 -Al, Cu-Bi 2 O3 -Cu and Al- Bi 2 O3-In 2 O3 structures is also investigated.en
dc.identifier.citationLEONTIE, Liviu; Mihail CARAMAN și Gheorghe Ioan RUSU. On the photoconductivity of Bi2O3 in thin films. Journal of Optoelectronics and Advanced Materials. 2000, vol. 2, pp. 385-389. ISSN (Online) 1841 - 7132.en
dc.identifier.issn1454-4164
dc.identifier.urihttps://msuir.usm.md/handle/123456789/16096
dc.language.isoenen
dc.subjectPhotoconductivityen
dc.subjectOxidic semiconductorsen
dc.subjectThin filmsen
dc.titleOn the photoconductivity of Bi2O3 in thin films [Articol]en
dc.typeArticleen

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