On the photoconductivity of Bi2O3 in thin films [Articol]
Date
2000
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
The spectral characteristics of photoconductivity for Bi2 O3 thin films were investigated. The
films were prepared by thermal oxidation in air of Bi evaporated films. As revealed by X-ray
diffraction and polarizing microscopy studies, polycrystalline and multiphasic films were
obtained. From the photoconductivity spectral curves, the bandgap energy values were
determined, by using the Moss criterion. The influence of oxidation (preparation) conditions
on the Eg values is discussed. The photoconductivity of Al-Bi 2 O3 -Al, Cu-Bi 2 O3 -Cu and Al-
Bi 2 O3-In 2 O3 structures is also investigated.
Description
LEONTIE, Liviu; Mihail CARAMAN și Gheorghe Ioan RUSU. On the photoconductivity of Bi2O3 in thin films. Journal of Optoelectronics and Advanced Materials. 2000, vol. 2, pp. 385-389. ISSN (Online) 1841 - 7132. .
Keywords
Photoconductivity, Oxidic semiconductors, Thin films
Citation
LEONTIE, Liviu; Mihail CARAMAN și Gheorghe Ioan RUSU. On the photoconductivity of Bi2O3 in thin films. Journal of Optoelectronics and Advanced Materials. 2000, vol. 2, pp. 385-389. ISSN (Online) 1841 - 7132.