Ellipsometric studies of nanometric CdS and CdTe films [Articol]
| dc.contributor.author | Caraman, Mihail | |
| dc.contributor.author | Evtodiev, Igor | |
| dc.contributor.author | Cuculescu, Elmira | |
| dc.contributor.author | Rusu, Marin | |
| dc.contributor.author | Salaoru, Iurie | |
| dc.date.accessioned | 2018-03-30T08:36:32Z | |
| dc.date.available | 2018-03-30T08:36:32Z | |
| dc.date.issued | 2005 | |
| dc.description.abstract | The thickness of the layers CdS and CdTe grown on the Si, Ge, GaAs was determined from the analysis of the polarization ellipse of the reflected light from the surfaces of structures thin layers substrate. The thermal treatment of the samples CdS-CdTe in the presence of CdCl2 leads to the increasing of the crystalline phase from layers. | en |
| dc.identifier.citation | CARAMAN, M., EVTODIEV, Ig. et al. Ellipsometric studies of nanometric CdS and CdTe films. In: Moldavian Journal of the Physical Sciences. 2005, nr. 1, pp. 114-118. ISSN 1810-648X. | en |
| dc.identifier.issn | 1810-648X. | |
| dc.identifier.uri | https://msuir.usm.md/handle/123456789/1733 | |
| dc.language.iso | en | en |
| dc.subject | semiconductor technologies | en |
| dc.title | Ellipsometric studies of nanometric CdS and CdTe films [Articol] | en |
| dc.type | Article | en |
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