Ellipsometric studies of nanometric CdS and CdTe films [Articol]
Date
2005
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Abstract
The thickness of the layers CdS and CdTe grown on the Si, Ge, GaAs was determined
from the analysis of the polarization ellipse of the reflected light from
the surfaces of structures thin layers substrate. The thermal treatment of the samples CdS-CdTe in the presence of CdCl2 leads to the increasing of the crystalline phase from layers.
Description
Keywords
semiconductor technologies
Citation
CARAMAN, M., EVTODIEV, Ig. et al. Ellipsometric studies of nanometric CdS and CdTe films. In: Moldavian Journal of the Physical Sciences. 2005, nr. 1, pp. 114-118. ISSN 1810-648X.