LUMINESCENCE OF β-Ga2O3 NANOFORMS OBTAINED BY OXIDATION OF GaSe DOPED WITH Eu
Date
2020
Journal Title
Journal ISSN
Volume Title
Publisher
Springer, Cham
Abstract
The GaSe single crystals were doped with Eu in the process of their synthesis and growth. The oxide of β-Ga2O3 doped with Eu in the form of massive nanowires was obtained by thermal treatment (TT) in the atmosphere of GaSe single crystals doped with 1.0 and 3.0 at.% of Eu. The crystalline structure, surface morphology and photoluminescence spectra of GaSe:Eu and β-Ga2O3:Eu single crystals were studied. The Photoluminescence (FL) spectrum of GaSe doped with 1.0 at.% of Eu at room temperature is formed as a result of transitions of 5D0 →7F1 to Eu3+ ion and as a result of radiation annihilation of n = 1 excitons in GaSe. The FL spectra of Ga2O3:Eu was interpreted on the basis of the energy level diagram of electrons in Eu3+ ion.
Description
Keywords
Thermal treatment, Nanowires Crystalline structure surface, Gallium selenide
Citation
Sprincean V., Untila D., Chirita A., Evtodiev I., Caraman I. (2020) Luminescence of β-Ga2O3 Nanoforms Obtained by Oxidation of GaSe Doped with Eu. In: Tiginyanu I., Sontea V., Railean S. (eds) 4th International Conference on Nanotechnologies and Biomedical Engineering. ICNBME 2019. IFMBE Proceedings, vol 77. Springer, Cham. https://doi.org/10.1007/978-3-030-31866-6_49