SILICON SOLAR CELLS BASED ON pSi/nSi3 N 4 NANOLAYERS

Abstract

Thin films of Si 3N4 were prepared by non-reactive magnetron sputtering in an Ar atmosphere. A previously synthesized Si 3N4 was used as a solid-state target. Deposition was carried out on a cold substrate of p-Si (1 0 0) with a resistivity of 2 Ohm cm. The Raman spectrum of the deposited Si 3N 4 layers has been investigated. The position of the maximum in the Raman scattering spectrum of Si3 N4 layers corre sponds to the Si3 N4 compound and the shape of the spectrum is characteristic for the nanocrystalline state of the cubic modification of silicon nitride. The film thickness has been determined from atomic force microscopy measurements. The results of electron diffraction investigations of n-Si3 N4 nanolayers with thicknesses up to 20 nm demonstrates that as-deposited Si 3N4 thin films consist of a mixture of microcrystalline and amorphous phases. Solar cells based on heterostructures consisting of a p-type Si (1 0 0) and n-type Si 3N4 nanolayers were fabricated and studied.