PHOTOLUMINESCENCE STUDIES OF THE INTERFACE OF CdS/CdTe HETEROJUNCTIONS
Date
2009
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Abstract
The photoluminescence analysis of CdS/CdTe interface layer
of CdS/CdTe heterojunction has been carried out in the 15-
100 K temperature range. An attempt to correlate observed
PL features with the CdSxTe1–x layer presence at the interface
of the heterojunctions was made.
It is assumed the 1.525 eV band has an excitonic origin and
1.37X PL band is a characteristic impurity band due to
CdSTe layer. Comparative plots showing SnO2/CdTe PL
spectra are given as well.
Description
VATAVU, Sergiu; Hehong ZHAO; Iuliana CARAMAN; Petru GAȘIN; Don MOREL și Chris FEREKIDES. Photoluminescence studies of the interface of CdS/CdTe heterojunctions. Physica Status Solidi. 2009, nr.5. pp.1299-1302. ISSN 1862-6351.
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Citation
VATAVU, Sergiu; Hehong ZHAO; Iuliana CARAMAN; Petru GAȘIN; Don MOREL și Chris FEREKIDES. Photoluminescence studies of the interface of CdS/CdTe heterojunctions. Physica Status Solidi. 2009, nr.5. pp.1299-1302. ISSN 1862-6351.