2. Articole

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    Silicon carbide nanolayers as a solar cell constituent [Articol]
    (2015) Zakhvalinskii, Vasilii; Pilyk, Evghenii; Goncharov, Igor; Simașchevici, Alexei; Șerban, Dormidont; Bruc, Leonid; Curmei, Nicolai; Rusu, Marin
    Thin films of predominantly amorphous n-type SiC were prepared by non-reactive magnetron sputtering in an Ar atmosphere. A previously synthesized SiC was used as a solid-state target. Deposition was carried out on a cold substrate of p-type Si (100) with a resistivity of 2 Vcm. The Raman spectrum shows a dominant band at 982 cm 1 , i.e., in the spectral region characteristic for SiC. It was found that the root mean square roughness varies from about 0.3 nm to 9.0 nm when the film thickness changes from about 2 nm to 56 nm, respectively. Transmission electron microscopy studies showed that SiC thin films consist predominantly of an amorphous phase with inclusions of very fine nanocrystallites. A heterostructure consisting of a p-type Si (100) and a layer of predominantly amorphous n-type SiC was fabricated and studied. The investigation of its electrical and photoelectric properties shows that the entire space charge region is located in Si. This is in addition confirmed by the spectral dependence of the p-Si/n-SiC photosensitivity. The barrier height at the p-Si/n-SiC interface estimated from dark I–V characteristics is of the order of 0.9–1.0 eV. Load I–V characteristics of p-Si/n-SiC-nanolayer solar cells demonstrate under standard AM1.5 illumination conditions a conversion efficiency of 7.22%.
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    Synthesis and electrophysical properties of CdS/ZnTe heterojunctions [Articol]
    (Academia de Ştiinţe a Moldovei, 2022) Lungu, Ion; Gagara, Lyudmila; Ghimpu, Lidia; Potlog, Tamara
    In this paper results of studying CdS/ZnTe heterostructures synthesized by the quasi- closed space sublimation method on glass substrates coated with an ITO layer are described. The electrical and photoelectric properties of the structures are studied using current–voltage and capacitance–voltage characteristics in a temperature range of 30–100 °C. Analysis of the experimental data shows that the main specific feature of CdS/ZnTe structures is the formation of a high-resistance transition layer, which affects the separation of carriers at the barrier contact. The current carrier concentration in the space charge region, which is determined from the capacitance–voltage characteristics, is 1  1015 cm3; this fact suggests that one of the contacting materials—ZnTe—exhibits a high resistivity. Measurements of current–voltage characteristics in the solar cell mode give the following photoelectric parameters: open circuit voltage (UOC = 0.53 V, JSC = 27–30 A/cm2, and FF = 0.25.
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    Celule solare cu homojonciune din fosfură de indiu [Articol]
    (CEP USM, 2013) Botnariuc, Vasile; Gorceac, Leonid; Cinic, Boris; Coval, Andrei; Inculeț, Ion; Raevschi, Simion
    Homojoncţiunea p+-p--n+InPcu şi fără strat frontal nCdS a fost obţinută aplicând metoda de epitaxie din faza gazoasă în sistemul In -PCl3-H2(p-InP, n+InP) şi metoda de volum cvasiînchis (nCdS). La studierea proprietăţilor electrice şi fotoelectrice ale acestor structuri s-a constatat că fotosensibilitatea a crescutcu două ordine,iar eficienţa CS este de 12% pentru homo structura cu strat frontal nCdS. Aceasta se datorează micşorării recombinării purtătorilor de sarcină minoritari la suprafaţă şi particularităţilor proprietăţilor electrice şi fotoelectrice ale acestor structuri.
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    Studiul interacţiunilor de schimb de la interfeţele celulelor solare CdS/CdTe [Articol]
    (CEP USM, 2014) Duca, Dumitru; Potlog, Tamara
    În această lucrare este studiată influenţa interfeţelor din celulele fotovoltaice SnO2/CdS/CdTe şi SnO2/TiO2/CdS/CdTe asupra parametrilor fotovoltaici ai dispozitivelor respective. A fost determinată starea chimică a elementelor prezente şi compuşii de la interfeţe. S-a constatat că factorul ce micşorează în special densitatea curentului de scurtcircuit în celula solară SnO 2/TiO2/CdS/CdTe este TiS2, care pentru un singur strat de atomi are o bandă interzisă de 1,0 eV. Prin urmare, la interfaţa TiO2/TiS2 se formează o barieră de potenţial care duce la micşorarea concentraţiei purtătorilor de sarcinăşi, respectiv, la micşorarea eficienţei deconversie a energiei solare în energie electrică