2. Articole

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    Growth and characterization of eu doped GaSe single crystals by X-ray diffraction and raman spectroscopy [Articol]
    (CEP USM, 2017) Untila, Dumitru; Evtodiev, Igor; Caraman, Iuliana; Kantser, Valeriu; Spalatu, Nicolae; Dmitroglo, Liliana; Evtodiev, Silvia; Spoială, Dorin; Rotaru, Irina; Gașin, Petru
    GaSe single crystals doped with Eu (0.025, 0.05, 0.5, 1.0 and 3.0 at%) were grown by Bridgman method using Ga, Se and Eu elementary components. The crystalline structure and vibration modes of the GaSe: Eu crystals lattice were studied by X-ray diffraction and Raman spectroscopy. Eu atoms arranged in the van der Waals space of GaSe: Eu crystals form Eu-Se valence bonds and restructure hexagonal lattice of GaSe leading to EuGa2Se4 crystallites formation. Defects generated by EuGa2Se4 crystallites lead to broadening and shifting of single phonon peaks present in Raman spectra towards shorter wavenumbers, and at the same time, activate the longitudinal optical vibrations of EuSe sublattice.
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    Solubilitatea metalelor de Fe în cristalele GaSb [Articol]
    (Universitatea de Stat „Alecu Russo“ din Bălţi, 2012) Georghită, E.; Mihălache, A.; Evtodiev, I.
    În baza spectrelor de energie atomică s-a studiat distribuţia atomilor de Fe în volumul materialului de puritate înaltă GaSb crescut prin metoda topirii zonale şi dopat cu Fe.