By thermal annealing of InSe, GaSe, and GaTe crystals in Zn vapors at 800, 870, and 1050K, respectively, a material consisting of ZnSe crystallites in both GaSe and InSe and ZnTe in GaTe has been prepared. Structural defects induced by intercalated atoms shield excitonic bonds in primary compounds and form both radiative recombination levels and electron trapping levels localized deep in the band gap of AIIIBVI crystals. The energies of trapping levels have been determined from thermally stimulated luminescence curves.
