2. Articole

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End date: 2019Subject: search.filters.subject.semiconductor

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    PROPRIETAȚILE GALVANOMAGNETICE ALE CRISTALELOR PB0,9CD0,1TE:GA<0,5>
    (CEP USM, 2019) Oprea, Irina
    Recently, narrow band Pb1-xCdxTe semiconductors have gained a special interest, because they are used to construct IR detectors. In this work is presented a complex study of the transport phenomena in Pb1-xCdxTe:Ga crystals and the analysis of their parameters.
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    ELECTRONIC STRUCTURE AND STRUCTURAL DEFECTS IN 3d-METAL DOPED In2O3
    (Springer, 2019) Ho, J.; Becker, J.; Leedahl, B.; Boukhvalov, D. W.; Zhidkov, I. S.; Kukharenko, A. I.; Kurmaev, E. Z.; Cholakh, S. O.; Gavrilov, N. V.; Brinzari, Vladimir; Moewes, A.
    Dilute magnetic semiconductors (DMSs) are a highly attractive field of research due to their potential to open new technological functionality. Here, we perform a systematic study of In2O3 thin films with dopant ions of Mn, Co, Ni, and Fe to investigate the unique interaction of each of these ions and their incorporation into the semiconductor lattice. We report substitutional positioning of Fe atoms into the In3+ site and a mixture of interstitial, metallic clustering, and substitutional positioning for Co, Mn, and Ni, discriminating between oxidation states for all dopant atoms.
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    OPTICAL AND PHOTOELECTRIC PROPERTIES OF NANOLAMELLAR STRUCTURES OBTAINED BY THERMAL ANNEALING OF INSE PLATES IN Zn VAPOURS
    (2018) Untila, Dumitru; Evtodiev, Igor; Caraman, Iuliana; Spalatu, Nicolae; Dmitroglo, Liliana; Caraman, Mihail
    The structural, optical and photoelectric properties of InSe crystals grown by Bridgman–Stockbarger method and ZnSe/InSe structures obtained on InSe by thermal annealing in Zn vapours are studied in this paper. The study of structural properties confirms that ZnSe compound is formed. The analysis of photoelectric properties reveal that both the ZnSe‐InSe composite layer and the composite/InSe heterojunction are photosensitive in the VIS‐NIR spectral region.
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    EXCITONIC ABSORPTION OF THE LIGHT IN HETEROJUNCTIONS Bi 2 O 3 -InSe
    (2009) Evtodiev, Igor
    The interface layer of the Bi2O3/InSe:Cd (0.10 at. %) heterojunction was investigated using optical and electroreflection spectra. The fundamental absorption edge of InSe:Cd interface layer, at 78 K, is formed by the excitonic absorption band n=1, with maximum at 1.328eV. Its direct optical band gap corresponds to electron transitions at the M point of the Brillouin zone, and is equal to 2.557 eV at 78 K.
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    SOME OPTICAL PROPERTIES OF GaSe CRYSTALS DOPED WITH ELEMENTS OF GROUP I (Li AND K)
    (2008) Caraman, Mihail; Evtodiev, Igor; Cuculescu, E.
    Alkaline solutions of the Li, K, andNa are used in electrical accumulators. The accumulating capacity is considerably higher comparing to technical accumulators if the principle of intercalation of the metals of group I of type AIIIBVI [1, 2] of the layered semiconductor is used. Usually variations of the compound In – Se [3] are used as electrodes. Semiconductors GaSe and GaS are not very often used as intercalated electrodes because their electrical resistivity is much higher comparing to the semiconductors InSe and modifications In2Se3.
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    GROWTH TECHNOLOGY FOR ZnSe SINGLE CRYSTALS WITH LOW DISLOCATION DENSITY
    (2008) Colibaba, Gleb; Nedeoglo, Dmitrii
    The influence of the growth temperature, undercooling, growth rate as well as growth chamber construction and furnace temperature profile on the structural perfection of the crystals grown by both physical and chemical vapors transport has been investigated. The conditions for growing of crystals free from subgrain boundaries and twins are suggested. The etch pits are not observed in the basic volume (up to 4 сm3) of grown crystals. It is shown, that PL spectra of as-grown ZnSe crystals consist of the edge radiation only. The resistivity of ZnSe crystals annealed in a Zn melt is higher than 108 Ohmcm, whereas the electrical conductivity of ZnSe:I crystals grown by chemical vapor transport and annealed in a Zn melt is 10 (Ohm⋅cm)-1 at room temperature.
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    FOTOLUMINESCENŢA MONOCRISTALELOR GaSe INTERCALATE CU Cd DIN SOLUŢIE DE CdCl2
    (Universitatea de Stat „Alecu Russo“ din Bălţi, 2015) Dmitroglo, Liliana
    Prin tratament termic la temperatura 753 K şi 853 K a plăcilor monocristaline de GaSe în vapori de Cd, timp de la 10 min pînă la 24 h, s-a obţinut un material compus din cristalite de CdSe şi GaSe cu dimensiuni medii de 34 nm şi, respectiv, 30 nm. În rezultatul interacţiunii atomilor de Cd cu atomii de Se, atît pe suprafaţa exterioară, cît şi la interfaţa dintre împachetările Se-Ga-Ga-Se, se formează straturi de CdSe. Cristalitele de CdSe pe suprafaţă cresc sub forma de plăci pe direcţia axei cristalografice C6. Spectrele de fotoluminescenţă (PL) la temperaturi de 78 K şi 300 K ale compozitului, conţin benzile dominante din spectrele de emisie luminescentă a componentelor compozitului GaSe şi CdSe.