2. Articole

Permanent URI for this collectionhttps://msuir.usm.md/handle/123456789/47

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End date: 2009Subject: search.filters.subject.semiconductor

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    EXCITONIC ABSORPTION OF THE LIGHT IN HETEROJUNCTIONS Bi 2 O 3 -InSe
    (2009) Evtodiev, Igor
    The interface layer of the Bi2O3/InSe:Cd (0.10 at. %) heterojunction was investigated using optical and electroreflection spectra. The fundamental absorption edge of InSe:Cd interface layer, at 78 K, is formed by the excitonic absorption band n=1, with maximum at 1.328eV. Its direct optical band gap corresponds to electron transitions at the M point of the Brillouin zone, and is equal to 2.557 eV at 78 K.
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    SOME OPTICAL PROPERTIES OF GaSe CRYSTALS DOPED WITH ELEMENTS OF GROUP I (Li AND K)
    (2008) Caraman, Mihail; Evtodiev, Igor; Cuculescu, E.
    Alkaline solutions of the Li, K, andNa are used in electrical accumulators. The accumulating capacity is considerably higher comparing to technical accumulators if the principle of intercalation of the metals of group I of type AIIIBVI [1, 2] of the layered semiconductor is used. Usually variations of the compound In – Se [3] are used as electrodes. Semiconductors GaSe and GaS are not very often used as intercalated electrodes because their electrical resistivity is much higher comparing to the semiconductors InSe and modifications In2Se3.
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    GROWTH TECHNOLOGY FOR ZnSe SINGLE CRYSTALS WITH LOW DISLOCATION DENSITY
    (2008) Colibaba, Gleb; Nedeoglo, Dmitrii
    The influence of the growth temperature, undercooling, growth rate as well as growth chamber construction and furnace temperature profile on the structural perfection of the crystals grown by both physical and chemical vapors transport has been investigated. The conditions for growing of crystals free from subgrain boundaries and twins are suggested. The etch pits are not observed in the basic volume (up to 4 сm3) of grown crystals. It is shown, that PL spectra of as-grown ZnSe crystals consist of the edge radiation only. The resistivity of ZnSe crystals annealed in a Zn melt is higher than 108 Ohmcm, whereas the electrical conductivity of ZnSe:I crystals grown by chemical vapor transport and annealed in a Zn melt is 10 (Ohm⋅cm)-1 at room temperature.