The characteristic features of temperature quenching of the intensity of the edge luminescence bands of n-ZnSe crystals annealed in different media (vacuum, Zn, Se) are investigated a wide temperature range. A change in the mechanisms of high-temperature exciton luminescence in the short-wavelength region of the spectrum (443 nm) with increase in temperature of the crystal is observed. It is shown that the nature of temperature quenching of the long-wavelength edge luminescence band (458 nm) is evidence of dissociation of associative luminescence centers with increase in the sample temperature.
