2. Articole

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    AERO-TiO2 PREPARED ON THE BASIS OF NETWORKS OF ZnO TETRAPODS
    (2022) Ciobanu, Vladimir; Ursachi, Veaceslav; Lehmann, Sebastian; Braniște, Tudor; Raevschi, Simion; Zamalai, Victor V.; Monaico, Eduard V.; Colpo, Pascal; Nielsch, Kornelius; Tighineanu, Ion
    In this paper, new aeromaterials are proposed on the basis of titania thin films deposited using atomic layer deposition (ALD) on a sacrificial network of ZnO microtetrapods. The technol-ogy consists of two technological steps applied after ALD, namely, thermal treatment at different temperatures and etching of the sacrificial template. Two procedures are applied for etching, one of which is wet etching in a citric acid aqua solution, while the other one is etching in a hydride vapor phase epitaxy (HVPE) system with HCl and hydrogen chemicals. The morphology, composition, and crystal structure of the produced aeromaterials are investigated depending on the temperature of annealing and the sequence of the technological steps. The performed photoluminescence analysis suggests that the developed aeromaterials are potential candidates for photocatalytic applications.
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    PHOTOLUMINESCENCE STUDY OF Eu-DOPED Ga2O3 AND GaN NANOWIRES AND NANOPARTICLES PRODUCED BY HYDROTHERMAL GROWTH
    (Editura "Tehnica-UTM", 2015-05-20) Rusu, Emil; Ursachi, Veaceslav; Culeac, Ion; Raevschi, Simion; Vlazan, Paulina
    We present results on preparation of Eu doped GaN nanoparticles and nanowires on the basis of Ga2O3 nanomaterial produced by hydrothermal growth. The monoclinic Ga2O3 nanoparticles and nanowires have been prepared with gallium nitrate and sodium hydroxide as precursors. nanomaterial produced by hydrothermal growth. The monoclinic Ga2O3 nanoparticles and nanowires have been prepared with gallium nitrate and sodium hydroxide as precursors. The geometrical form on the nanomaterial is determined by the duration of the hydrothermal process. The Ga2O3 nanomaterial is transformed unto GaN nanoparticles and nanowires by nitridation in a flow of NH3 and H2. The photoluminescence properties Eu doped Ga2O3 and GaN nanomaterial are investigated under pulsed and continuum wave excitation. The produced material is also investigated by means of XRD analysis, Raman scattering and Fourier transform infrared (FTIR) spectroscopy.