2. Articole
Permanent URI for this collectionhttps://msuir.usm.md/handle/123456789/47
Browse
2 results
Search Results
Item RECENT ADVANCES IN ZnSe-BASED DEVICES: FROM UV TO TERAHERTZ APPLICATIONS(CEP USM, 2024) Sirkeli, Vadim P.; Nedeoglo, Natalia D; Nedeoglo, Dmitrii D.; Vatavu, Sergiu A.; Yilmazoglu, Oktay; Hajo, Ahid S.; Preu, Sascha; Hartnagel, Hans L.; Küppers, FrankoZinc selenide is a II-VI compound material with wide bandgap. Due to its unique properties like direct wide bandgap, high resistance to intense UV and X-Ray radiation, ZnSe is attractive material for fabrication of many photonic and electronic devices. In this paper we report on recent advances on ZnSe-based optoelectronic devices covering spectral region from ultraviolet to terahertz.Item ZnSe-BASED SOLAR-BLIND ULTRAVIOLET PHOTODETECTORS WITH DIFFERENT SCHOTTKY CONTACT METALS(CEP USM, 2021) Sirkeli, Vadim; Nedeoglo, Natalia; Nedeoglo, Dmitrii; Yilmazoglu, Oktay; Hajo, Ahid; Preu, Sascha; Kuppers, Franko; Hartnagel, HansWe report on the selection of contact metallisations for ZnSe-based metal-semiconductor-metal ultraviolet photode- tectors. Our evaluation is based on Ni/Au, Cr/Au, and hybrid Ag-nanowire contacts. Low values of dark current of 0.32 nA, 0.82 nA and 1.64 nA at bias voltage of 15 V were achieved for photodetectors with Ag-NW, Ni/Au and Cr/Au interdigital contacts, respectively. The best performance of our ZnSe-based ultraviolet photodetectors is observed for Ni/Au interdigital contacts. This is due to the higher Schottky barrier height, which is equal to ~ 1.49 eV for Ni/Au contacts in comparison with ~ 1.26 eV for Cr/Au contacts. A very high responsivity of 5.40 AW-1 at bias voltage of 15 V for light with a wave- length of 325 nm is obtained for devices with Ni/Au interdigital contacts. Moreover, the maximum of photocurrent on/off ratio of 20342 and minimum of NEP of ~ 3 × 10-15 W Hz-1/2 at bias voltage of 15 V was achieved for this type of device.