2. Articole

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    CARACTERIZAREA STRUCTURALĂ A STRATURILOR SUBȚIRI DE Sb2Te3 FABRICATE PRIN METODA SUBLIMĂRII ÎN VOLUM CUAZI-ÎNCHIS
    (CEP USM, 2024) Untila, Dumitru; Lungu, Ion; Suman, Victor; Gadiac, Ivan; Potlog, Tamara
    Straturi subțiri de Sb2Te3 au fost obținute pe suporturi de sticlă ITO/CdS prin metoda sublimării în volum cuazi-închis (CSS). Prin analiza difracției razelor X, s-a constatat că straturile subțiri de Sb2Te3 au rețea cristalină hexagonală, ce aparține grupului spațial P6/mmm. Creșterea temperaturii evaporatorului de la 470°C până la 530°C, duce la modificarea orientării preferabile de creștere a cristalitelor compusului Sb2Te3 și la creșterea gradului de cristalinitate a acestuia. Investigațiile Raman, au confirmat rezultatele XRD și au fost folosite pentru a obține informații suplimentare asupra structurii straturilor subțiri de Sb2Te3. Caracteristica dubletului observat la 119,54 cm–1 și 138,83 cm–1, precum și la 93,65 cm-1 si 107,36 cm-1 cu intensitate integrală foarte mică pot fi atribuite interacțiunii Te-Te între pachetele de telurură de antimoniu.
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    EFFECT OF CHLORINE DOPING ON CdTe THIN FILMS
    (2013) Dumitriu, Petru; Potlog, Tamara; Mîrzac, Alexandra; Dmitroglo, Liliana; Luca, Dumitru
    This paper analyzes the effect of chlorine treatment on the structure and resistance of CdTe layers. The morphology, chemical composition, and structure were studied using scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), and X-ray diffraction (XRD). Both non-activated and activated CdTe layers are polycrystalline with an average grain size being three times higher after chlorine activation and thermal treatment. All CdTe thin layers regardless of the treatment temperature have a cubic crystal structure.
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    ELECTRICAL PROPERTIES OF THERMALLY ANNEALED CdS THIN FILMS OBTAINED BY CHEMICAL BATH DEPOSITION
    (Institute of Electrical and Electronics Engineers Inc., 2011-10-17) Scorțescu, Dumitru; Maticiuc, Natalia; Nicorici, Valentina; Spalatu, Nicolae; Potlog, Tamara; Hiie, Jaan; Valdna, Vello
    Electrical conductivity and the Hall-effect are investigated in the temperature interval (80-400) K on thermally annealed in H 2 CdS thin films obtained by chemical bath deposition. Different characters of the temperature dependence of conductibility are observed in the CdS films annealed at different temperatures. The Hall measurements allow calculating the values of the NA , N D , n ex and ED . According to Hall measurements the CdS films show several donor levels at different energetic depths in dependence of the annealing temperature. The sample annealed at high temperatures than 350oC proves to be compensated with a sharply decreasing electrical conductivity with the temperature decrease.
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    SYNTHESIS AND PROPERTIES OF AL-DOPED ZnO THIN FILMS FOR PHOTOVOLTAICS
    (Institute of Electrical and Electronics Engineers Inc., 2018-11-27) Potlog, Tamara; Lungu, Ion; Botnariuc, Vasile; Gorceac, Leonid; Raevschi, Simion; Taku, Miyake; Worasawat, Suchada; Mimura, Hidenori
    Polycrystalline undoped and Al-doped ZnO thin films were deposited by spray pyrolysis using oxygen and argon atmospheres. The influence of postdeposition vacuum annealing on the structure, morphology and optical properties was studied by X-ray diffraction, atomic force microscopy and UV–VIS spectroscopy. The thermal vacuum annealing induces structural and morphological changes, especially in Al-doped ZnO thin films synthetized in oxygen atmosphere. Further on, the electrical conductivity in dependence of the nature of gas atmosphere and Al concentration is discussed.
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    THE CARACTERIZATION OF THE CdS-BASED SOLAR CELL HETEROJUNCTIONS
    (Institute of Electrical and Electronics Engineers Inc., 2010-10-11) Potlog, Tamara; Botnariuc, Vasile; Gorceac, Leonid; Spalatu, Nicolae; Maticiuc, Natalia; Raevschi, Simion
    The CdS-based solar cell heterojunctions (HJ) have been obtained by growth of CdS at relatively lower temperature using the close space sublimation method(CSS). Investigation of the photovoltaic characteristics shows an efficiency of about 12 % for InP/CdS and 9.6 % for CdS/CdTe solar cell HJ. The analysis of the forward dark current-voltage and the capacitance-voltage characteristics indicate a tunnelling recombination current which flows through states near or at the interfaces of a thermal energy of about 0.62 eV for CdS/CdTe and 0.42 eV for InP/CdS solar cell heterojunctions. The solar energy conversion efficiency is influenced by the interface states through the open circuit voltage and the fill factor.
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    EFFECT OF CARRIER GAS AND VACUUM ANNEALING ON THE PHYSICAL PROPERTIES OF ZnO THIN FILMS DOPED WITH GALLIUM BY CHEMICAL SPRAY PYROLYSIS
    (Editura "Tehnica-UTM", 2018-05-24) Potlog, Tamara; Lungu, Ion; Botnariuc, Vasile; Raevschi, Simion; Worasawat, Suchada; Mimura, Hidenori; Gorceac, Leonid
    Structural, optical and electrical properties of zinc oxide thin films doped with 2% Ga, annealed in the vacuum at the same temperature and obtained onto glass substrates by the chemical spray pyrolysis method in the different gas atmospheres were investigated by X-ray Diffraction (XRD), UV-VIS spectrophotometry and Hall measurements, respectively. XRD studies revealed that all films were polycrystalline in nature, with a hexagonal wurtzite crystal structure and a predominant (002) c-axis orientation. All ZnO:Ga thin films had higher than 80 % transmittances in the visible region. Doping with 2% Ga led to a decrease in the optical band gap indifferent of the nature of the carrier gas. The synthesis of ZnO thin films with 2% Ga doping and annealing in the same conditions in Ar and O2 atmospheres led to the lower conductivity with electron concentration of 1016 cm−3.
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    STUDY OF THE EFFECT OF HEAT TREATMENT ON OPTICAL AND ELECTRICAL PARAMETERS OF CuO FILMS
    (2024) Suman, Victor; Lungu, Igor; Potlog, Tamara; Ghimpu, Lidia
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    SYNTHESIS AND ELECTROPHYSICAL PROPERTIES OF CdS/ZnTe HETEROJUNCTIONS
    (Academia de Ştiinţe a Moldovei, 2022) Lungu, Ion; Gagara, Lyudmila; Ghimpu, Lidia; Potlog, Tamara
    In this paper results of studying CdS/ZnTe heterostructures synthesized by the quasi- closed space sublimation method on glass substrates coated with an ITO layer are described. The electrical and photoelectric properties of the structures are studied using current–voltage and capacitance–voltage characteristics in a temperature range of 30–100 °C. Analysis of the experimental data shows that the main specific feature of CdS/ZnTe structures is the formation of a high-resistance transition layer, which affects the separation of carriers at the barrier contact. The current carrier concentration in the space charge region, which is determined from the capacitance–voltage characteristics, is 1  1015 cm3; this fact suggests that one of the contacting materials—ZnTe—exhibits a high resistivity. Measurements of current–voltage characteristics in the solar cell mode give the following photoelectric parameters: open circuit voltage (UOC = 0.53 V, JSC = 27–30 A/cm2, and FF = 0.25.
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    COPPER-RELATED DEFECTS IN ZnTe THIN FILMS GROWN BY THE CLOSE SPACE SUBLIMATION METHOD
    (Academia de Ştiinţe a Moldovei, 2022) Lungu, Ion; Ghimpu, Lidia; Untila, Dumitru; Potlog, Tamara
    Low-temperature photoluminescence (PL) is used to study defects evolution via immersion technique and annealing in vacuum of ZnTe thin films. In this paper we studied how copper doping from solutions of different molar concentrations affects PL of ZnTe thin films grown by close space sublimation (CSS) method. Undoped ZnTe thin films showed PL emission in the (520-680) nm wavelength region. The incorporation of copper in ZnTe produce a number of broad emission bands that correspond to an electron transition from the conduction band to spin-orbit states of the localized level of Cu2+ ions. All the studied samples had variable concentrations of oxygen and the possibility of the formation of auxiliary oxides is discussed.
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    FABRICAREA STRUCTURILOR SnO2/CdTe/ZnO ŞI CERCETAREA PROPRIETĂŢILOR ACESTORA
    (CEP USM, 2020) Lungu, Ion; Colibaba, Gleb; Potlog, Tamara