2. Articole

Permanent URI for this collectionhttps://msuir.usm.md/handle/123456789/47

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Author: search.filters.author.Küppers, Franko

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    HIGH PERFORMANCE ZnSe-BASED ULTRAVIOLET PHOTODETECTORS WITH Cr/Au, Ni/Au AND HYBRID Ag-NANOWIRE CONTACTS
    (2024) Sirkeli, Vadim; Nedeoglo, Natalia; Nedeoglo, Dmitrii; Yilmazoglu, Oktay; Hajo, Ahid; Preu, Sascha; Küppers, Franko; Hartnagel, Hans
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    RECENT ADVANCES IN ZnSe-BASED DEVICES: FROM UV TO TERAHERTZ APPLICATIONS
    (CEP USM, 2024) Sirkeli, Vadim P.; Nedeoglo, Natalia D; Nedeoglo, Dmitrii D.; Vatavu, Sergiu A.; Yilmazoglu, Oktay; Hajo, Ahid S.; Preu, Sascha; Hartnagel, Hans L.; Küppers, Franko
    Zinc selenide is a II-VI compound material with wide bandgap. Due to its unique properties like direct wide bandgap, high resistance to intense UV and X-Ray radiation, ZnSe is attractive material for fabrication of many photonic and electronic devices. In this paper we report on recent advances on ZnSe-based optoelectronic devices covering spectral region from ultraviolet to terahertz.
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    EFFECT OF p-NiO INTERLAYER ON INTERNAL QUANTUM EFFICIENCY OF p-GaN/n-ZnO LIGHT-EMITTING DEVICES
    (American Scientific Publishers, 2015) Sirkeli, Vadim; Yilmazoglu, Oktay; Küppers, Franko; Hartnagel, Hans
    We report on numerical investigations of p-GaN/n-ZnO light-emitting devices with p-NiO interlayer, and on LED design optimization which includes bandgap engineering, thickness and doping of constituent layers. The current–voltage dependences of investigated LEDs show a threshold voltage of 3.1 V and 5.4 V for the LED devices without and with presence of p-NiO interlayer, respectively. It is found that p-NiO layer act as electron blocking layer, that lead to the enhance of charge carriers confinement in active region, and to the increasing of internal quantum efficiency (IQE) of LED device up to 0.5%, that in four times higher in compare with that for original p-GaN/n-ZnO LED device.
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    EFFECT OF p-NiO AND n-ZnSe INTERLAYERS ON THE EFFICIENCY OF p-GaN/n-ZnO LIGHT-EMITTING DIODE STRUCTURES
    (IOP Publishing Ltd, 2015) Sirkeli, Vadim; Yilmazoglu, Oktay; Küppers, Franko; Hartnagel, Hans
    We report on a numerical study of the characteristics of p-GaN/n-ZnO light-emitting diodes (LEDs) with p-NiO and n-ZnSe interlayers, and on LED design optimization which includes bandgap engineering, thickness and doping of constituent layers. The current-voltage dependences of investigated LEDs show a threshold voltage of 3.1 V, 5.4 V and 5.6 V for LED devices without and with the presence of p-NiO and n-ZnSe interlayers, respectively. It is found that p-NiO, n-ZnSe and n-ZnO interlayers act as an electron blocking layer, active media layer, and electron transport layer, respectively. It is established that the insertion of both p-NiO and n-ZnSe interlayers leads to the enhancement of charge carrier-confinement in the active region and to the significant increase of internal quantum efficiency (IQE) of the LED device up to 82%, which is comparable with IQE values in order to obtain better AlGaN- and InGaN-based LEDs. It is found that the efficiency of LED devices at 100 A cm−2 is equal to 0.024, 0.09 and 16.4% of external quantum efficiency (EQE), 1.3 × 10−4, 1.6 × 10−4, and 6.4 lm W−1 of PE, and 1.3 × 10−4, 2.9 × 10−4, and 12 cd A−1 of CE for p-GaN/n-ZnO, p-GaN/p-NiO/n-ZnO, and p-GaN/p-NiO/n-ZnSe/n-ZnO LED devices, respectively.
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    ENHANCED RESPONSIVITY OF ZnSe-BASEDMETAL–SEMICONDUCTOR–METAL NEAR-ULTRAVIOLETPHOTODETECTOR VIA IMPACT IONIZATION
    (Willey, 2018) Sirkeli, Vadim; Yilmazoglu, Oktay; Hajo, Ahid S.; Nedeoglo, Natalia; Nedeoglo, Dmitrii; Preu, Sascha; Küppers, Franko; Hartnagel, Hans
    We report on high‐responsivity, fast near‐ultraviolet photodetectors based on bulk ZnSe employing a metal–semiconductor–metal structure with and without interdigital contacts. A very high responsivity of 2.42 and 4.44 A W−1 at 20 V bias voltage and high rejection rate of 7900 and 4810 for the light with a wavelength of 325 nm is obtained for photodetectors without and with interdigital contacts, which indicates an internal gain. The mechanism of internal gain is attributed to the impact ionization of ZnSe atoms under high internal electric field strength of 133 kV cm−1. Also a low dark current of ≈3.4 nA and high detectivity of ≈1.4 × 1011 cm Hz1/2 W−1 at a voltage of 20 V is achieved for the device with interdigital contacts at room temperature.