2. Articole
Permanent URI for this collectionhttps://msuir.usm.md/handle/123456789/47
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Item ZnO-BASED TERAHERTZ QUANTUM CASCADE LASERS(Elsevier, 2019) Sirkeli, Vadim; Hartnagel, HansHigh-power terahertz sources operating at room-temperature are promising for many applications such as explosive materials detection, non-invasive medical imaging, and high speed telecommunication. Here we report the results of a simulation study, which shows the significantly improved performance of room-temperature terahertz quantum cascade lasers (THz QCLs) based on a ZnMgO/ZnO material system employing a 2-well design scheme with variable barrier heights and a delta-doped injector well. We found that by varying and optimizing constituent layer widths and doping level of the injector well, high power performance of THz QCLs can be achieved at room temperature: optical gain and radiation frequency is varied from 108 cm−1 @ 2.18 THz to 300 cm−1 @ 4.96 THz. These results show that among II–VI compounds the ZnMgO/ZnO material system is optimally suited for high-performance room-temperature THz QCLs.Item ZnO FOR INFRARED AND TERAHERTZ APPLICATIONS(Elsevier, 2021) Sirkeli, Vadim; Hartnagel, HansThis chapter reviews the recent progress of the theoretical and experimental studies of ZnO-based structures such as quantum cascade lasers, resonant-tunneling diodes, and quantum well detectors and their applications for infrared and terahertz spectral range. The role of spontaneous and piezoelectric polarization in polar ZnO-based structures and their impact on intersubband transitions and the performance of terahertz devices are discussed in detail. It is shown that ZnO-based compounds are promising materials for the fabrication of terahertz sources operating up to room temperature due to their unique properties such as their large bandgap, conduction band offset energy, and high longitudinal-optical phonon energy. Moreover, ZnO-based terahertz sources can cover the spectral region of 0.1–12 THz, which is very important for THz imaging and detection of explosive materials and medical spectroscopy applications, which could be not covered by conventional GaAs-based terahertz devices. In terms of the reported significant progress in the growth of nonpolar m-plane ZnO-based heterostructures and devices with low defect density, a wide perspective for the design and fabrication of high-power terahertz sources at room-temperature operation is now opened up.