2. Articole

Permanent URI for this collectionhttps://msuir.usm.md/handle/123456789/47

Browse

Author: search.filters.author.Goncearenco, EvgheniiSubject: search.filters.subject.ZnSe

Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item
    OBTAINING OF II-VI COMPOUND SUBSTRATES WITH CONTROLLED ELECTRICAL PARAMETERS AND PROSPECTS OF THEIR APPLICATION FOR NANOPOROUS STRUCTURES
    (John Wiley & Sons, 2014) Colibaba, Gleb; Goncearenco, Evghenii; Nedeoglo, Dmitrii; Nedeoglo, Natalia; Monaico, Eduard; Tiginyanu, Ion
  • Thumbnail Image
    Item
    INFRARED PHOTOLUMINESCENCE OF ZnSe:GD CRYSTALS
    (Elsevier, 2015) Colibaba, Gleb; Goncearenco, Evghenii; Nedeoglo, Dmitrii; Nedeoglo, Natalia
    Photoluminescent and optical properties of ZnSe crystals doped with Gd impurity are investigated in infrared (IR) spectral range. The influence of crystal growth temperature, impurity concentration, stoichiometric deviation and post-annealing cooling rate, concentration of Cr and Cu background impurities, temperature and excitation level on photoluminescent and optical properties of the samples is studied. Based on these investigations, the structure of complex IR photoluminescence (PL) bands is analyzed. Correlation between the component parts of the bands at 1 and 2 µm is found and possibility to control the IR PL spectra by enrichment of the samples with Zn or Se is discussed. Coincidence of the IR PL spectra structure is shown for the samples doped with Gd, Yb, and Cr impurities. The model that explains the formation of complexes based on rare-earth elements (REEs) and Cr and Cu background impurities fixed in the nodes of crystal lattice with tetrahedral symmetry, responsible for IR PL bands, is proposed.
  • Thumbnail Image
    Item
    PHOTOLUMINESCENCE OF ZnSe SAMPLES DOPED WITH ANTIMONY AND IODINE
    (Elsevier, 2021) Sushkevich, Konstantin; Goncearenco, Evghenii; Nedeoglo, Natalia; Nedeoglo, Dmitrii
    Photoluminescence (PL) spectra of ZnSe samples grown by Chemical Vapour Transport (CVT), Physical Vapour Transport (PVT), and from melt have been studied in the temperature range from 100 to 300 K. Impurity-defect composition of the studied samples was varied by doping with antimony (Sb) or iodine (I), as well as co-doping with Sb and I, both during the crystal growth and crystal annealing in the respective melts. It is established that the PL band with maximum at (570–580) nm is present only in the spectra for ZnSe samples co-doped with Sb and I, independent of growth technique mand doping method. The (SbSe–ISe) radiative centre, with the energy level placed 0.5 eV above the valence band top, is proposed to be responsible for this PL band.