2. Articole

Permanent URI for this collectionhttps://msuir.usm.md/handle/123456789/47

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Author: search.filters.author.Evtodiev, IgorSubject: search.filters.subject.semiconductor

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    OPTICAL AND PHOTOELECTRIC PROPERTIES OF NANOLAMELLAR STRUCTURES OBTAINED BY THERMAL ANNEALING OF INSE PLATES IN Zn VAPOURS
    (2018) Untila, Dumitru; Evtodiev, Igor; Caraman, Iuliana; Spalatu, Nicolae; Dmitroglo, Liliana; Caraman, Mihail
    The structural, optical and photoelectric properties of InSe crystals grown by Bridgman–Stockbarger method and ZnSe/InSe structures obtained on InSe by thermal annealing in Zn vapours are studied in this paper. The study of structural properties confirms that ZnSe compound is formed. The analysis of photoelectric properties reveal that both the ZnSe‐InSe composite layer and the composite/InSe heterojunction are photosensitive in the VIS‐NIR spectral region.
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    EXCITONIC ABSORPTION OF THE LIGHT IN HETEROJUNCTIONS Bi 2 O 3 -InSe
    (2009) Evtodiev, Igor
    The interface layer of the Bi2O3/InSe:Cd (0.10 at. %) heterojunction was investigated using optical and electroreflection spectra. The fundamental absorption edge of InSe:Cd interface layer, at 78 K, is formed by the excitonic absorption band n=1, with maximum at 1.328eV. Its direct optical band gap corresponds to electron transitions at the M point of the Brillouin zone, and is equal to 2.557 eV at 78 K.
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    SOME OPTICAL PROPERTIES OF GaSe CRYSTALS DOPED WITH ELEMENTS OF GROUP I (Li AND K)
    (2008) Caraman, Mihail; Evtodiev, Igor; Cuculescu, E.
    Alkaline solutions of the Li, K, andNa are used in electrical accumulators. The accumulating capacity is considerably higher comparing to technical accumulators if the principle of intercalation of the metals of group I of type AIIIBVI [1, 2] of the layered semiconductor is used. Usually variations of the compound In – Se [3] are used as electrodes. Semiconductors GaSe and GaS are not very often used as intercalated electrodes because their electrical resistivity is much higher comparing to the semiconductors InSe and modifications In2Se3.