2. Articole

Permanent URI for this collectionhttps://msuir.usm.md/handle/123456789/47

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    Effect of chlorine doping on CdTe thin films [Articol]
    (2013) Dumitriu, Petru; Potlog, Tamara; Mîrzac, Alexandra; Dmitroglo, Liliana; Luca, Dumitru
    This paper analyzes the effect of chlorine treatment on the structure and resistance of CdTe layers. The morphology, chemical composition, and structure were studied using scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), and X-ray diffraction (XRD). Both non-activated and activated CdTe layers are polycrystalline with an average grain size being three times higher after chlorine activation and thermal treatment. All CdTe thin layers regardless of the treatment temperature have a cubic crystal structure.
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    Characterization of photovoltaic devices based on CdTe [Articol]
    (CEP USM, 2014) Dumitriu, Petru; Maticiuc, Natalia; Potlog, Tamara
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    Proprietăţile optice ale straturilor subţiri de ZnSe şi analiza heterostructurilor obţinute pe baza lor [Articol]
    (CEP USM, 2013) Dumitriu, Petru
    This paper reports on the morphology, structural and optical properties of ZnSe thin films as deposited and activated in ZnCl2 saturated solution on glass substrates covered with SnO2. SEM images reveal the films are polycrystalline and that the morphology is not changed drastically after activation. XRD analysis show that the lattice parameters is changed with substrate temperatures and activation of the films because the strain of the lattice. Photovoltaic devices on the basis of these films were fabricated with an efficiency of 6.6%.
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    Convertoare fotovoltaice TiO 2 / p -CdTe Ş I TiO 2 / n -CdSe [Articol]
    (CEP USM, 2014) Dumitriu, Petru; Potlog, Tamara
    În această lucrare este descris procesul de fabricare şi proprietăţile fotoelectrice ale convertoarelor fotovoltaice bazate pe structurile TiO2/CdSe şi TiO2/CdTe. Cele mai bune valori ale tensiunii circuitului deschis şi ale densităţii curentului de scurtcircuit pentru structura TiO2/CdSe sunt 0,43 V şi, respectiv, 9,12 mA/cm2 , iar pentru dispozitivul cu CdTe – 0,59 V şi 9,5 mA/cm2, respectiv. Eficienţa cea mai ridicată pentru structura TiO2/CdSe este de 1,63%, iar pentru TiO2/CdTe – de 1,98%