(2006) Cuculescu, Elmira; Evtodiev, Igor; Caraman, Mihail; Rusu, George G.
GaSe single crystal films were doped during growth process with Cu or Cd atoms with concentration ranged between 0.05
and 0.50 at. %. Single crystal films (with thickness about 0.5 μm) were obtained by mechanical splitting of bulk single
crystals. Impurity concentration was determined using atomic emission spectroscopy. Spectral dependences of absorption
coefficient and photoconductivity were studied in the range 1.50 eV – 3.70 eV. It was experimentally established that the
absorption spectra have an additional absorption band and its corresponding energy depends on the nature (Cu or Cd) and
concentration of the doping atoms. Also, independently on the presence of the dopant, other two absorption bands in the IR
region are present.
