In the paper, experimental results concerning the absorption and photosensibility spectral dependence of GaS and CdTe
thin film components of GaS/CdTe heterojunctions are presented. GaS films (d = 0.06 μm – 2.8 μm) were deposited onto
ITO substrate by laser light pulses. CdTe films (d = 3.6 μm) were deposited onto GaS films by close-spaced sublimation
technique. At the fundamental absorption edge, the absorption coefficient of CdTe layers increases of five orders of
magnitude in a narrow 40 – 100 meV energy range, up to 4 104cm-1. At room temperature, the energy band of GaS/CdTe
heterojunctions photosensitivity is 1.45 eV-2.75 eV, the photocurrent having a constant value up to 2.0 eV photon energy.
