2. Articole

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Author: search.filters.author.Cinic, BorisSubject: search.filters.subject.gallium arsenide

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    Chemical method for the gallium arsenide rectification structure divide into crystals [Articol]
    (UTM, 2009-10-01) Baranov, Simion; Cinic, Boris; Dudca, Tudor; Suman, Victor
    This investigations are referred to power semiconductor devices (PSD) area manufactured by gallium arsenide (GaAs) advanced technology. The work’s objective is excluding the break-down effect on the p-n junction surface of high voltage devices, which is advance progressed with diminishing the crystal dimensions in the dividing process of the semiconductor structures. We propose the method of the GaAs deep etching by a mixture utilizing concentrated acids as nitric and hydrochloric acids in equal rates. After 30 min of mixing up the solution formation is consorted of the endothermic reaction, bound up by nitrosyl chloride (NOCl) formation, which dissolves the GaAs decomposed product in solution by arsenic oxidation up to As(V), forming ortoarsenic acid and gallium chloride. This method is used for dividing semiconductor structure of GaAs with 0.4-0.6 mm of thickness in small dimensioned crystals. The advantages of this technology are the great speed of GaAs dissolving, low costs of manufacturing and profitableness.
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    Proprietăţile electrice ale celulei fotovoltaice cu joncţiune reliefată fabricată prin HVPE [Articol]
    (Editura "Tehnica-UTM", 2014-10-22) Baranov, Simion; Gorceac, Leonid; Cinic, Boris
    In this report we are represented the electro-physical properties of the photovoltaic cell with single relief junction fabricated on gallium arsenide substrate by HVPE method. This cell have the shunt resistance of 3.8 time bigger then the plane one, that it demonstrates the decrease of energy losses on the cell surface. It increases the efficiency of charges gathering (78 % of the full coefficient). It was used the AFM and RAMAN methods of investigation.