2. Articole

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Author: search.filters.author.Baranov, SimionSubject: search.filters.subject.gallium arsenide

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    Chemical method for the gallium arsenide rectification structure divide into crystals [Articol]
    (UTM, 2009-10-01) Baranov, Simion; Cinic, Boris; Dudca, Tudor; Suman, Victor
    This investigations are referred to power semiconductor devices (PSD) area manufactured by gallium arsenide (GaAs) advanced technology. The work’s objective is excluding the break-down effect on the p-n junction surface of high voltage devices, which is advance progressed with diminishing the crystal dimensions in the dividing process of the semiconductor structures. We propose the method of the GaAs deep etching by a mixture utilizing concentrated acids as nitric and hydrochloric acids in equal rates. After 30 min of mixing up the solution formation is consorted of the endothermic reaction, bound up by nitrosyl chloride (NOCl) formation, which dissolves the GaAs decomposed product in solution by arsenic oxidation up to As(V), forming ortoarsenic acid and gallium chloride. This method is used for dividing semiconductor structure of GaAs with 0.4-0.6 mm of thickness in small dimensioned crystals. The advantages of this technology are the great speed of GaAs dissolving, low costs of manufacturing and profitableness.
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    High temperature ultra-fast gallium arsenide rectifier devices [Articol]
    (Institute of Electrical and Electronics Engineers Inc., 2012-10-20) Baranov, Simion; Gorceac, Leonid; Cheibaș, Victor
    The report is related to the high temperature electronics field. The industrial developed country practice demonstrates that up to 70% of the fabricated electrical energy passes through semiconductor converters. Only in the field of electrical drive, which uses about 50% from the produced electrical energy, passing to the frequency converter of the asynchronous drives speed control, brings an energy economy up to 25%. In the electrical transport with the energy braking recovering the economy is more than 30%. The present elaboration is foreseeing the improvement of the technological production route of gallium arsenide (GaAs) power semiconductor devices (PSD), by introducing some innovative technological processes as: (1) GaAs epitaxial technology in the Ga-AsCl 3-H2 system; (2) epitaxial structures divided into crystals by chemical method; (3) GaAs p-n junction passivation by own oxide (Ga2 O3) precipitate on the divided surface of the crystal. The goal of the project is increasing manufacturing efficiency (ME) at the GaAs power devices with more than 600 V of voltage fabrication. The proposed improvements are increasing ME with 40% and are expanding the blocking voltage interval up to 1000 V. As a result a new product was elaborated and proposed to the manufacturing– the ultra-fast current converter with 80 ns of recovery time, stable at high temperature (200 oC) and 4.5 kV of blocking voltage, that outrun the characteristics of commercial product ESJC30-05(0.3 s, 110 oC).
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    Proprietăţile electrice ale celulei fotovoltaice cu joncţiune reliefată fabricată prin HVPE [Articol]
    (Editura "Tehnica-UTM", 2014-10-22) Baranov, Simion; Gorceac, Leonid; Cinic, Boris
    In this report we are represented the electro-physical properties of the photovoltaic cell with single relief junction fabricated on gallium arsenide substrate by HVPE method. This cell have the shunt resistance of 3.8 time bigger then the plane one, that it demonstrates the decrease of energy losses on the cell surface. It increases the efficiency of charges gathering (78 % of the full coefficient). It was used the AFM and RAMAN methods of investigation.