Browsing by Author "Leontie, L."

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Optical Properties of III–VI Lamellar Semiconductors Doped with Cu and Cd and of Related III–VI/Native Oxide Structures [Articol]
(American Scientific Publishers, 2011) Evtodiev, Silvia; Caraman, Iulia; Dmitroglo, Liliana; Leontie, L.; Nedeff, V.; Dafinei, A.; Lazar, G.; Evtodiev, I.
GaS, GaSe and GaTe are typical representatives of III–VI layered semiconductor materials, showing highly anisotropic mechanical and optical properties. At photon energies hν < E g , the anisotropy ratio for the absorption coefficients at the n = 1 excitonic peak, corresponding to E →‖C → and E →⊥C → polarizations, is α ‖/α ⊥≈15. Optical functions n e (λ) and n o (λ) of GaS and GaSe in the wavelength range 0.36–22 μm have been determined. For the photon energies hν < E g ind, these correspond to a normal dispersion and can be described by power-law wavelength dependences. By means of FTIR transmission and reflection spectroscopy in the spectral range of 1000–85 cm−1, for plan-parallel plates with thickness between several tens of nanometers and centimeters, the wavenumbers of longitudinal optical ν(LO) and transverse optical ν(TO) phonons have been determined for GaSe [ν ⊥(LO) = 254 cm−1, ν ⊥(TO) = 214 cm−1], GaS [ν ⊥(LO) = 359 cm−1, ν ⊥(TO) = 297 cm−1, ν ‖(LO) = 336 cm−1], and GaTe [ν(LO) = 164 cm−1, ν(TO) = 118 cm−1].
Preparation and optical properties of lamellar GaSe -ZnSe nanocomposites [Articol]
(2015) Caraman, M.; Untila, D.; Canțer, V.; Evtodiev, Igor; Caraman, Iu.; Susu, O.; Leontie, L.
ZnSe-GaSe nanocomposite plates photoluminescent in a photon energy range of 1.80−2.64 eV were obtained via exposing GaSe single-crystal plates to a Zn-vapor heat treatment at temperatures of 673−873 K. The photoluminescence spectrum is dominated bythe self-activated emission band of ZnSe witha maximum at 2.04 eV. The average size of the ZnSe crystallites is ~45 nm. The absorption spectrum of the composite consists of two regions characteristic of direct optical transitions in GaSe crystals with a band gap of 1.99 eV and ZnSe crystallites with aband gap of 2.56 eV at room temperature.
Synthesis and optical properties of Ga2O3 nanowires grown on GaS substrate [Articol]
(Elsevier, 2019) Leontie, L.; Sprincean, Veaceslav; Spaltu, N.; Cojocaru, A.; Susu, Ana; Lupan, Oleg; Vatavu, Elmira; Carlescu, Aurelian; Untila, Dumitru; Caraman, Iuliana; Evtodiev, Igor; Tiginyanu, Ion; Caraman, Mihail
Gallium oxide (β-Ga2O3) nanowires were synthesized by heat treatment of single crystal β-GaS plates in air. Crystal structure and composition of synthesized materials were studied by X-ray diffraction, energy dispersive X-ray spectroscopy and Raman spectroscopy. Thermal treatment of β-GaS plates at 1023 K leads to the formation of a Ga2O3 (native oxide) layer on β-GaS (0001) surface of plates. Layer thickness and size of Ga2O3 wires contained were found to depend on temperature and duration of applied heat treatment. For 1023 K and 6 h, the length of Ga2O3 wires laid in the range from units to tens of nanometers, while for 1123 K and 30 min, between 30 and 40 μm.