ZnO-BASED TERAHERTZ QUANTUM CASCADE LASERS

dc.contributor.authorSirkeli, Vadim
dc.contributor.authorHartnagel, Hans
dc.date.accessioned2021-12-07T10:38:43Z
dc.date.available2021-12-07T10:38:43Z
dc.date.issued2019
dc.description.abstractHigh-power terahertz sources operating at room-temperature are promising for many applications such as explosive materials detection, non-invasive medical imaging, and high speed telecommunication. Here we report the results of a simulation study, which shows the significantly improved performance of room-temperature terahertz quantum cascade lasers (THz QCLs) based on a ZnMgO/ZnO material system employing a 2-well design scheme with variable barrier heights and a delta-doped injector well. We found that by varying and optimizing constituent layer widths and doping level of the injector well, high power performance of THz QCLs can be achieved at room temperature: optical gain and radiation frequency is varied from 108 cm−1 @ 2.18 THz to 300 cm−1 @ 4.96 THz. These results show that among II–VI compounds the ZnMgO/ZnO material system is optimally suited for high-performance room-temperature THz QCLs.en
dc.identifier.citationSIRKELI, V., HARTNAGEL, H. ZnO-based terahertz quantum cascade lasers. In: Opto-Electronics Review. 2019, Vol. 27, Issue 2, pp. 119 - 122. ISSN 1230-3402.en
dc.identifier.issn1230-3402
dc.identifier.urihttps://www.sciencedirect.com/science/article/abs/pii/S1230340218301537
dc.identifier.urihttps://msuir.usm.md/handle/123456789/5102
dc.language.isoenen
dc.publisherElsevieren
dc.subjectZnOen
dc.subjectMgOen
dc.subjectZnMgOen
dc.subjectquantum well devicesen
dc.subjectquantum cascade lasersen
dc.subjectterahertz (THz) radiationen
dc.titleZnO-BASED TERAHERTZ QUANTUM CASCADE LASERSen
dc.typeArticleen

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