Unele proprietăţi optice ale structurilor InSe cu strat subţire de oxid de bismut [Articol]

Abstract

In this work is investigated the light absorption in the InSe layer of the heterostructure as well as the InSe layer from the interface of the junction Bi2O3-InSe throughtheabsorption, reflection spectrums and photoluminescence at tempera-tures from 78K to 300K. As a result of the thermic oxidation of a thin layer of Bi from the freshly sliced surface of the InSe crystal in the contact layer are formed two centers of localization of excitons and at the same time of the energy states by which is simulated the impurity luminescence.