EXCITONIC ABSORPTION OF THE LIGHT IN HETEROJUNCTIONS Bi 2 O 3 -InSe
| dc.contributor.author | Evtodiev, Igor | |
| dc.date.accessioned | 2018-07-06T09:19:49Z | |
| dc.date.available | 2018-07-06T09:19:49Z | |
| dc.date.issued | 2009 | |
| dc.description.abstract | The interface layer of the Bi2O3/InSe:Cd (0.10 at. %) heterojunction was investigated using optical and electroreflection spectra. The fundamental absorption edge of InSe:Cd interface layer, at 78 K, is formed by the excitonic absorption band n=1, with maximum at 1.328eV. Its direct optical band gap corresponds to electron transitions at the M point of the Brillouin zone, and is equal to 2.557 eV at 78 K. | en |
| dc.identifier.citation | EVTODIEV, Ig. Excitonic absorption of the light in heterojunctions Bi 2 O 3 -InSe. In: Moldavian Journal of the Physical Sciences. 2009, nr. 2, pp. 163-168. ISSN 1810-648X. | en |
| dc.identifier.issn | 1810-648X | |
| dc.identifier.uri | https://msuir.usm.md/handle/123456789/1763 | |
| dc.language.iso | en | en |
| dc.subject | semiconductor | en |
| dc.title | EXCITONIC ABSORPTION OF THE LIGHT IN HETEROJUNCTIONS Bi 2 O 3 -InSe | en |
| dc.type | Article | en |
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