CELULE FOTOVOLTAICE CU HOMOJONCŢIU.NE DIN InP: REZULTATE ŞI COMPARĂRI

Abstract

Au fost obţinute homojoncţiuni n-pInP cu strat intermediar p-InP crescut repetat prin metoda HVPE cu sau fără strat frontal nCdS şi au fost cercetate proprietăţile electrice şi fotoelectrice ale acestora. S-a constatat că depunerea stratului intermediar măreşte fotosensibilitatea homostructurilor cu 15...20%. Eficienţa energetică a CF cu structura n+ CdS-n+InP-p-InP-p+InP constituie 13,5% pentru fluxul luminos incident de 100 mWcm-2. Eficienţa CF cu heterostructura nCdS-pInPşi cu strat intermediar similar creşte cu 27%, în comparaţie cu CFcu homostructura n-p--pInP şi cu strat frontal nCdS, având valoarea de 17,3%. Se conturează posibilitatea reală de mărire a eficienţei CF de acest tip.

Electrical and photoelectrical properties of InP p-n homojunctions with an intermediate p-InP layer repeatedly grown by HVPE method, with and without frontal nCdS layer were produced and studied. It was found that the deposition of this intermediate p-InP layer increases the cells photosensitivity by 15 ... 20%.The solar energy conversion efficiency of photovoltaic cell (PC) with n+CdS-n+InP-p- InP-p+InP structure is 13.5%at the illumination of 100 mW.cm -2. The efficiency of the PCbased on nCdS-pInP heterostructure and an analogic intermediate layer increases to 27% compared with the PC based on n-p--pInP homostructure having a frontal nCdS layer has an efficiency of 17.3%. The possibility of increasing of the efficiency of this PC type is formulated.